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Articles by author: G.R. Pozina

• Characterisation and Defects in Silicon Carbide
  Published in: Silicon Carbide and Related Materials 2001 (p9)
• Characterization of Bulk and Epitaxial SiC Material Using Photoluminescence Spectroscopy
  Published in: Silicon Carbide and Related Materials 2001 (p593)
• Implementation of Hot-Wall MOCVD to the Growth of High-Quality GaN on SiC
  Published in: Silicon Carbide and Related Materials - 2002 (p991)
• Luminescence of InGaN/GaN Multiple Quantum Wells Grown by Mass-Transport
  Published in: Silicon Carbide and Related Materials 2000 (p791)
• Photoluminescence and Electroluminescence Characterization of In_xGa_1-xN/In_yGa_1-yN Multiple Quantum Well Light Emitting Diodes
  Published in: Silicon Carbide and Related Materials 2001 (p1493)
• Polariton Effects in CdTe/(Cd,Mn)Te Heterostructures
  Published in: II-VI Compounds and Semimagnetic Semiconductors (p227)
• Radiative Recombination in InGaN/GaN Multiple Quantum Wells
  Published in: Silicon Carbide and Related Materials - 1999 (p1571)
• SiC Crystal Growth by HTCVD
  Published in: Silicon Carbide and Related Materials 2003 (p9)
• The Role of Non-Radiative Defects in Thermal Quenching of Luminescence in SiGe/Si Structures Grown by Molecular Beam Epitaxy
  Published in: Defects in Semiconductors 19 (p139)
• Time-Resolved Photoluminescence Study of Bound and Free Excitons in 4H SiC
  Published in: Silicon Carbide and Related Materials - 1999 (p675)