Papers by Author: G.S. Oehrlein

Paper TitlePage

SF6/02 and CF4/02 Reactive-Ion-Etching-Induced Defects in Silicon Studied by Photoluminescence Spectroscopy: Role of Oxygen
Authors: I.A. Buyanova, Anne Henry, Bo Monemar, J. Lennart Lindström, Moissei K. Sheinkman, G.S. Oehrlein
1807
Photoluminescence Characterisation of the Silicon Surface Exposed to Plasma Treatment
Authors: Anne Henry, Bo Monemar, J. Lennart Lindström, T.D. Bestwick, G.S. Oehrlein
1445
An Isothermal Pumping Mechanism for the Introduction of High Hydrogen Concentrations in p+ Layers in Silicon
Authors: A.D. Marwick, M. Wittmer, G.S. Oehrlein
39
Photoluminescence of Defects Produced by Reactive Ion Etching of Silicon
Authors: G.A. Northrop, G.S. Oehrlein
1253
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