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Articles by author: G. Weyer

• Annealing Behaviour of High Concentration of Sn and Sb Implanted in Silicon
  Published in: Defects in Semiconductors 14 (p1135)
• Applications of Mössbauer Spectroscopy to Investigations of Defects in Semiconductors
  Published in: Defects in Semiconductors 15 (p1137)
• As-Implanted Lattice Sites of Dopants in Semiconductors
  Published in: Defects in Semiconductors 14 (p1183)
• Defect Impurity Complex Formation at High Donor Concentration in Silicon
  Published in: Defects in Semiconductors 16 (p273)
• Defect Structures in Ion-Implanted InSb
  Published in: Defects in Semiconductors 14 (p1189)
• Diffusion of Tellurium in Silicon
  Published in: Defects in Semiconductors 14 (p133)
• Electron-Positron-Channeling and Mössbauer-Effect Studies of Indium-Vacancy Complexes in Ion-Implanted Nickel
  Published in: Vacancies and Interstitials in Metals and Alloys (p665)
• Evidence for High Vacancy Concentrations in Heavily Doped N-Type Silicon from Mossbauer Experiments
  Published in: Defects in Semiconductors 18 (p1117)
• Frenkel Pairs in INSB Induced by Neutrino Recoil and Observed by Mössbauer Spectroscopy
  Published in: Defects in Semiconductors 18 (p1527)
• Lattice and Grain-Boundary Diffusion in of ¹²¹Te in Silver after Radioisotope Implantation at the Isolde
  Published in: Vacancies and Interstitials in Metals and Alloys (p443)
• Low Fluence Implantations in GaAs: A Mossbauer Spectroscopy Investigation of Individual and Overlapping Damage Cascades
  Published in: Defects in Semiconductors 16 (p1003)
• Mössbauer Spectroscopy of Fe in Silicon with the Novel Laser-Ionized ⁵⁷Mn⁺ Ion Beam at Isolde
  Published in: Defects in Semiconductors 19 (p437)
• On the Formation of Highly Symmetric Impurity-Vacancy Clusters in Ion-Implanted FCC Metals
  Published in: Vacancies and Interstitials in Metals and Alloys (p569)
• Radiogenic Sn-Vacancy Complexes in FCC Nickel and Cobalt
  Published in: Vacancies and Interstitials in Metals and Alloys (p669)
• Rapid Thermal Annealing of Ion Implanted Strained Si_1-xGe_x
  Published in: Defects in Semiconductors 17 (p513)