Papers by Author: Gerhard Pensl

Paper TitlePage

Annealing Process of N+-/P+-Ions Coimplanted along with Si+-, C+- or Ne+-Ions into 4H-SiC – Governed by Formation of Electrically Neutral Complexes or by Site-Competition-Effect?
Authors: Frank Schmid, Gerhard Pensl
909
Electronic Properties of SiON/HfO2 Insulating Stacks on 4H-SiC (0001)
Authors: Valeri V. Afanas'ev, S.A. Campbell, K.Y. Cheong, Florin Ciobanu, Sima Dimitrijev, Gerhard Pensl, Andre Stesmans, L. Zhong
1361
Structural and Electronic Properties of the 6H-SiC(0001)/Al2O3 Interface Prepared by Atomic Layer Deposition
Authors: Thomas Seyller, Kun Yuan Gao, Lothar Ley, Gerhard Pensl, Florin Ciobanu, A. Tadich, J.D. Riley, R.C.G. Leckey
1369
Comparison of the Electrical Channel Properties between Dry- and Wet- Oxidized 6H-SiC MOSFETs Investigated by Hall Effect
Authors: Michael Laube, Gerhard Pensl, Kin Kiong Lee, Takeshi Ohshima
1381
Impurity Conduction Observed in Al-Doped 6H-SiC
Authors: M. Krieger, Kurt Semmelroth, Gerhard Pensl
685
Study of the Temperature Induced Polytype Conversion in Cubic CVD SiC by Raman Spectroscopy
Authors: Roland Püsche, Martin Hundhausen, Lothar Ley, Kurt Semmelroth, Frank Schmid, Gerhard Pensl, Hiroyuki Nagasawa
617
A P-Channel MOSFET on 4H-SiC
Authors: Ji Sheng Han, K.Y. Cheong, Sima Dimitrijev, Michael Laube, Gerhard Pensl
1401
Midgap Defects in 4H-, 6H- and 3C-SiC Detected by Deep Level Optical Spectroscopy
Authors: Sergey A. Reshanov, Konrad Schneider, Reinhard Helbig, Gerhard Pensl, Hiroyuki Nagasawa, Adolf Schöner
513
Negative-U-Centers in 4H- and 6H-SiC Detected by Spectral Light Excitation
Authors: Michael Weidner, Gerhard Pensl, Hiroyuki Nagasawa, Adolf Schöner, Takeshi Ohshima
485
Growth of 3C-SiC Bulk Material by the Modified Lely Method
Authors: Kurt Semmelroth, M. Krieger, Gerhard Pensl, Hiroyuki Nagasawa, Roland Püsche, Martin Hundhausen, Lothar Ley, M. Nerding, Horst P. Strunk
151
Showing 51 to 60 of 128 Paper Titles