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Articles by author: Günter Wagner

• Aluminum Incorporation into 4H-SiC Layers during Epitaxial Growth in a Hot-Wall CVD System
  Published in: Silicon Carbide and Related Materials 2001 (p207)
• Codoping of 4H-SiC with N- and P-Donors by Ion Implantation
  Published in: Silicon Carbide and Related Materials 2001 (p791)
• Degradation of Charge Collection Efficiency Obtained for 6H-SiC n⁺p Diodes Irradiated with Gold Ions
  Published in: Silicon Carbide and Related Materials 2006 (p913)
• Electrical Activation of Implanted Phosphorus Ions in (0001)/(11-20)-Oriented 4H-SiC
  Published in: Silicon Carbide and Related Materials 2001 (p787)
• Electrical and Optical Characterization of SiC
  Published in: Silicon Carbide and Related Materials - 2002 (p365)
• Electrical and Structural Properties of Solution Grown Silicon Layers on Polycrystalline Silicon Substrates
  Published in: Polycrystalline Semiconductors IV (p143)
• Evolution of Defect and Hydrogen-Related Low Temperature Photoluminescence Spectra with Annealing for Hydrogen or Helium Implanted 6H SiC
  Published in: Silicon Carbide and Related Materials 2004 (p493)
• Freestanding 3C-SiC Grown by Sublimation Epitaxy Using 3C-SiC Templates on Silicon
  Published in: Silicon Carbide and Related Materials 2011 (p177)
• Fundamental Study of the Temperature Ramp-Up Influence for 3C-SiC Hetero-Epitaxy on Silicon (100)
  Published in: Silicon Carbide and Related Materials 2009 (p151)
• Influence of Growth Parameters on the Residual Strain in 3C-SiC Epitaxial Layers on (001) Silicon
  Published in: Silicon Carbide and Related Materials 2007 (p223)
• Influence of the Growth Conditions on the Layer Parameters of 4H-SiC Epilayers Grown in a Hot-Wall Reactor
  Published in: Silicon Carbide and Related Materials 2000 (p95)
• Influence of the Host Composition on the Equilibrium Structure of Er-Centers in Silicon
  Published in: Light Emission from Silicon (p86)
• Minimum Ionizing Particle Detector Based on p⁺n Junction SiC Diode
  Published in: Silicon Carbide and Related Materials 2005 (p1469)
• Origin of the Up-Conversion Process in 4H SiC
  Published in: Silicon Carbide and Related Materials 2005 (p473)
• Photoluminescence Study of C-H and C-D Centers in 4H SiC
  Published in: Silicon Carbide and Related Materials 2003 (p589)