HOME CONTACT My eBook

Username: Password:

> @scientific.net

Articles by author: Hans Jürgen von Bardeleben

• A Combined Photoluminescence and Electron Paramagnetic Resonance Study of Low Energy Electron Irradiated 4H SiC
  Published in: Silicon Carbide and Related Materials 2005 (p477)
• A Model for the Atomic Configuration of the EL2 Defect in GaAs
  Published in: Defects in Semiconductors 14 (p305)
• Alloy Dependence of the Carrier Concentration and Negative Persistant Photoconductivity in Ga_1-xAl_xSb/InAs/Ga_1-xAl_xSb Single Quantum Wells
  Published in: Defects in Semiconductors 17 (p611)
• Calculation of Hyperfine Constants of Defects in 4H-SiC
  Published in: Silicon Carbide and Related Materials - 2002 (p511)
• Coexistence of Deep and Shallow Paramagnetic Excited States of the DX Center in GaAlAs
  Published in: Defects in Semiconductors 16 (p787)
• Defects in As-Prepared and Thermally Oxydized Porous Silicon
  Published in: Defects in Semiconductors 17 (p1487)
• Electrical and Physical Behavior of SiC Layers on Insulator (SiCOI)
  Published in: Silicon Carbide and Related Materials - 1999 (p715)
• Electrical Characterization of Surface Defects on Porous p-Type Silicon
  Published in: Defects in Semiconductors 17 (p1475)
• Electron Paramagnetic Resonance Studies of Intrinsic Defects in Electron-Irradiated GaAs
  Published in: Defect and Diffusion Forum Vols. 117-118 (p1)
• Electron Paramagnetic Resonance Studies of Low Temperature Molecular Beam Epitaxial GaAs Layers
  Published in: Defects in Semiconductors 16 (p1051)
• Electron Paramagnetic Resonance Studies of the DX Center in GaAlAs
  Published in: Physics of DX Centers in GaAs Alloys (p181)
• Energy Levels Associated with the Metastable State of EL2
  Published in: Defects in Semiconductors 16 (p911)
• EPR Observation of the Arsenic Antisite - Arsenic Vacancy Complex
  Published in: Defects in Semiconductors 14 (p299)
• EPR Studies of Interface Defects in n-Type 6H-SiC/SiO₂ Using Porous SiC
  Published in: Silicon Carbide and Related Materials - 2002 (p495)
• EPR Study of Carbon Vacancy-Related Defects in Electron-Irradiated 6H-SiC
  Published in: Silicon Carbide and Related Materials 2000 (p517)