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CONFERENCE
6/16/2013 - 6/19/2013
The 7th International conference on Physical and Numerical Simulation of Materials Processing
5/16/2013 - 5/19/2013
2nd International Congress on Advanced Materials
4/13/2013 - 4/14/2013
2013 2nd lnternational Conference on lntclligent Materials, Applied Mechanics and Design Science (IMAMD 2013)
more...
Articles by author: Hiromichi Ohashi
12 papers on 1 page:
1
Challenges of 4H-SiC MOSFETs on the C(000-1) Face toward the Achievement of Ultra Low On-Resistance
Published in:
Silicon Carbide and Related Materials 2007
(p907)
Comparison of Super-Junction Structures in 4H-SiC and Si for High Voltage Applications
Published in:
Silicon Carbide and Related Materials 2000
(p719)
Doping Concentration Optimization for Ultra-Low-Loss 4H-SiC Floating Junction Schottky Barrier Diode (Super-SBD)
Published in:
Silicon Carbide and Related Materials 2008
(p655)
Electromigration Reliability of the Contact Hole in SiC Power Devices Operated at Higher Junction Temperatures
Published in:
Silicon Carbide and Related Materials 2009
(p1139)
Fabrication of 4H-SiC DIMOSFETs by High-Temperature (>1400ÂșC) Rapid Thermal Oxidation and Nitridation Using Cold-Wall Oxidation Furnace
Published in:
Silicon Carbide and Related Materials 2005
(p1309)
Fabrication of 4H-SiC Floating Junction Schottky Barrier Diodes (Super-SBDs) and their Electrical Properties
Published in:
Silicon Carbide and Related Materials 2005
(p1175)
Possibility of Power Electronics Paradigm Shift with Wide Band Gap Semiconductors
Published in:
Silicon Carbide and Related Materials 2003
(p21)
SiC Device Limitation Breakthrough with Novel Floating Junction Structure on 4H-SiC
Published in:
Silicon Carbide and Related Materials - 2002
(p887)
Simulation, Fabrication and Characterization of 4H-SiC Floating Junction Schottky Barrier Diodes (Super-SBDs)
Published in:
Silicon Carbide and Related Materials 2006
(p881)
Super-Junction Device Forward Characteristics and Switched Power Limitations
Published in:
Silicon Carbide and Related Materials 2001
(p1251)
The Theoretical Study on Total Power Dissipation of SiC Devices in Comparison with Si Devices
Published in:
Silicon Carbide and Related Materials 2003
(p1233)
Unexpected Subluxation Detected after Cemented Alumina-on-Alumina THA
Published in:
Bioceramics 15
(p839)
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