HOME
CONTACT
My eBook
Username:
Password:
FULLTEXT SEARCH
NEW:
Advanced Search
MSF
>
Materials Science Forum
KEM
>
Key Engineering Materials
SSP
>
Solid State Phenomena
DDF
>
Defect and Diffusion Forum
AMM
>
Applied Mechanics and Materials
AMR
>
Advanced Materials Research
AST
>
Advances in Science and Technology
JNanoR
>
Journal of Nano Research
JBBTE
>
Journal of Biomimetics, Biomaterials, and Tissue Engineering
JMNM
>
Journal of Metastable and Nanocrystalline Materials
JERA
>
International Journal of Engineering Research in Africa
AEF
>
Advanced Engineering Forum
NH
>
Nano Hybrids
> @scientific.net
CONFERENCE
6/16/2013 - 6/19/2013
The 7th International conference on Physical and Numerical Simulation of Materials Processing
5/16/2013 - 5/19/2013
2nd International Congress on Advanced Materials
4/13/2013 - 4/14/2013
2013 2nd lnternational Conference on lntclligent Materials, Applied Mechanics and Design Science (IMAMD 2013)
more...
Articles by author: Hiroshi Funakubo
21 papers on 2 pages:
1
[2]
[next]
Conduction Mechanism of La-, Nb-Doped BaTiO
3
Thin Films by Doping MOCVD
Published in:
Electroceramics in Japan IV
(p87)
CVD of SrBi
2
Ta
2
O
9
(SBT) Thin Film from Bi(CH
3
)
3
- Sr[Ta(O·C
2
H
5
)
6
]
2
- O
2
System
Published in:
Electroceramics in Japan II
(p145)
Dielectric Properties of Bismuth Layer-Structured Oxide Thin Films with Preferential Crystal Orientation at High-Temperature
Published in:
Electroceramics in Japan XIV
(p191)
Dielectric Properties of Highly (001)-Plane Oriented SrBi
4
Ti
4
O
15
Thin Films
Published in:
Electroceramics in Japan XIII
(p131)
Diffusion of Bi into ZnO Film Prepared by CVD and Its I-V Characteristics
Published in:
Electroceramics in Japan I
(p175)
Effect of Incubation Time on Deposition Behavior of Ruthenium Films by MOCVD Using (2,4-Dimethylpentadienyl)(Ethylcyclopentadienyl)Ruthenium
Published in:
Asian Ceramic Science for Electronics III and Electroceramics in Japan XII
(p87)
Effect of Starting Materials on Deposition Behavior, Crystal Structure and Electrical Properties of MOCVD-PZT Films
Published in:
Electroceramics in Japan VI
(p57)
Effect of the Annealing Temperature on Dielectric Properties of Bi
1.5
Zn
1.0
Nb
1.5
O
7
Films Prepared by MOCVD
Published in:
Electroceramics in Japan XI
(p175)
Electrical Properties and Crystal Structures of Semiconductive Nb-Doped BaTiO
3
Thin Film Prepared by MOCVD
Published in:
Electroceramics in Japan I
(p167)
Electrical Properties of Perovskite-Based Ferroelectric Thin Films Modified Using Rare-Earth Elements
Published in:
Electroceramics in Japan IX
(p49)
Electrical Properties of Polycrystalline and Epitaxially Grown PZT Thin Films
Published in:
Electroceramics in Japan IV
(p83)
Electrical Properties of SrBi
2
Ta
2
O
9
(SBT) Thin Film Prepared by Metalorganic Chemical Vapor Deposition
Published in:
Electroceramics in Japan III
(p93)
Ferroelectricity of Epitaxial and Polycrystalline PZT Films Prepared by Pulsed-MOCVD
Published in:
Asian Ceramic Science for Electronics II and Electroceramics in Japan V
(p69)
In-Plane Rotated Crystal Structure in Continuous Growth of Bismuth Cuprate Superconducting Film
Published in:
Theory, Modeling and Numerical Simulation
(p53)
Investigation of Oxygen Vacancies in Micro-Patterned PZT Thin Films Using Raman Spectroscopy
Published in:
Asian Ceramic Science for Electronics III and Electroceramics in Japan XII
(p135)
Username:
Password: