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Articles by author: I.I. Khlebnikov

• Aluminum and Boron Diffusion into (1-100) Face SiC Substrates
  Published in: Silicon Carbide and Related Materials 2001 (p557)
• An Analytical Study of the SiC Growth Process from Vapor Phase
  Published in: Silicon Carbide and Related Materials - 1999 (p35)
• Characterization of Silicon Carbide using Raman Spectroscopy
  Published in: Silicon Carbide and Related Materials - 1999 (p615)
• Graphitization of the Seeding Surface during the Heating Stage of SiC PVT Bulk Growth
  Published in: Silicon Carbide and Related Materials - 2002 (p99)
• Influence of the Crystal Thickness on the SiC PVT Growth Rate
  Published in: Silicon Carbide and Related Materials 2001 (p95)
• Initial Stage of Crystallization in the Growth of Silicon Carbide on Substrate with Micropipes
  Published in: Silicon Carbide and Related Materials - 1999 (p59)
• Selective Doping of 6H-SiC by Diffusion of Boron
  Published in: Silicon Carbide and Related Materials - 1999 (p945)
• Thick Film SiC Epitaxy for 'Filling Up' Micropipes
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p167)