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Articles by author: I.N. Yassievich

• Acceptor States in Boron Doped SiGe Quantum Wells
  Published in: Defects in Semiconductors 19 (p91)
• Acceptor States in Boron Doped SiGe Quantum Wells
  Published in: Defects in Semiconductors 19 (p1613)
• Effect of Interface on Capture and Emission Processes via Deep Centers
  Published in: Defects in Semiconductors 17 (p579)
• Er Diffusion and Er-Induced Ga-Al Interdiffusion in GaAs/AlGaAs Quantum Structures
  Published in: Defects in Semiconductors 19 (p1701)
• Er-Luminescence in MBE-Grown AlGaAs
  Published in: Defects in Semiconductors 19 (p1583)
• Excitation and De-Excitation of Erbium Ions in Semiconductor Matrices
  Published in: Defects in Semiconductors 19 (p1595)
• Excitation Cross-Section of Erbium in Semiconductor Matrices under Optical Pumping
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p651)
• Multiphonon Recombination in Semiconductors
  Published in: Defects in Semiconductors 15 (p1351)
• Multiphonon-Assisted Tunnel Ionisation of Deep Impurities in High-Frequency Electric Field
  Published in: Defects in Semiconductors 19 (p1281)
• Recombination-Induced Defect Heating and Related Phenomena
  Published in: Defects in Semiconductors 16 (p511)
• Resonance Acceptor States and THz Generation in Uniaxially Strained p-Ge
  Published in: Defects in Semiconductors 19 (p71)
• Resonant Acceptor States and Stimulated THz Emission in Semiconductors and Semiconductor Structures
  Published in: Ultrafast Phenomena in Semiconductors 2001 (p181)