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Articles by author: Isaho Kamata

• LPCVD Growth and Structural Properties of 4H-SiC Epitaxial Layers
  Published in: Silicon Carbide and Related Materials - 1999 (p145)
• Micropipe Closing via Thick 4H-SiC Epitaxial Growth Involving Structural Transformation of Screw Dislocations
  Published in: Silicon Carbide and Related Materials 2000 (p311)
• Migration of Dislocations in 4H-SiC Epilayers during the Ion Implantation Process
  Published in: Silicon Carbide and Related Materials 2006 (p271)
• Observation of Shrinking and Reformation of Shockley Stacking Faults by PL Mapping
  Published in: Silicon Carbide and Related Materials 2005 (p375)
• Simulation of Threading Edge Dislocation Images in X-Ray Topographs of Silicon Carbide Homo-Epilayers
  Published in: Silicon Carbide and Related Materials 2005 (p411)
• Structural and Electrical Study of 4H-SiC CVD-Grown Layer with Micropipe Dissociation
  Published in: Defects and Diffusion in Ceramics (p111)
• Structure of In-Grown Stacking Faults in the 4H-SiC Epitaxial Layers
  Published in: Silicon Carbide and Related Materials 2004 (p323)
• X-Ray Three-Dimensional Topography Imaging of Basal-Plane and Threading-Edge Dislocations in 4H-SiC
  Published in: Silicon Carbide and Related Materials 2011 (p323)