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Papers by Author: J.C. Bourgoin

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Metastable Defects in Compound Semiconductors

Authors: J.C. Bourgoin

73

Recombination Centers in Electron Irradiated Si and GaAs

Authors: J.C. Bourgoin, M. Zazoui, M.A. Zaidi

629

Defects in Thick Epitaxial GaAs Layers

Authors: H. Samie, J.C. Bourgoin

997

Detection and Identification of the EL2 Metastable in GaAs

Authors: J.C. Bourgoin

993

Electrical Properties of Low Temperature Grown GaAs

Authors: M. Stellmacher, J. Nagle, K. Khirouni, J.C. Bourgoin

929

Defect Induced Electron Transport Trough Semiconductor Barriers

Authors: J.C. Bourgoin, Lassad El Mir

437

Defects in Electron Irradiated GaP and GaInP

Authors: M.A. Zaidi, H. Maaref, M. Zazoui, J.C. Bourgoin

295

Detection of Defects Responsible for Lifetime in p-Type Si

Authors: M. Zazoui, J.C. Bourgoin, Didier Stiévenard, D. Deresmes

189

Energy Levels Associated with the Metastable State of EL2

Authors: Didier Stiévenard, Christian Delerue, G. Brémond, Gérard Guillot, R. Azoulay, Hans Jürgen von Bardeleben, J.C. Bourgoin, Jean Claude Portal, E. Ranz

911

Photo-Ionization and Metastability of the DX Center in GaAlAs Alloys

Authors: M. Zazoui, S.L. Feng, Hans Jürgen von Bardeleben, J.C. Bourgoin

455

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