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Articles by author: J.C. Bourgoin

• A Critical View of DX Models
  Published in: Physics of DX Centers in GaAs Alloys (p253)
• A Model for the Atomic Configuration of the EL2 Defect in GaAs
  Published in: Defects in Semiconductors 14 (p305)
• Accurate Determination of Capture Time Constant of Interface States in MOS Structures
  Published in: Defects in Semiconductors 14 (p499)
• Characterization of Electron Traps in GaAs-GaAlAs Superlattices
  Published in: Defects in Semiconductors 14 (p199)
• Defect Induced Electron Transport Trough Semiconductor Barriers
  Published in: Defects in Semiconductors 18 (p437)
• Defects in Electron Irradiated GaP and GaInP
  Published in: Defects in Semiconductors 17 (p295)
• Defects in Thick Epitaxial GaAs Layers
  Published in: Defects in Semiconductors 19 (p997)
• Detection and Identification of the EL2 Metastable in GaAs
  Published in: Defects in Semiconductors 19 (p993)
• Detection of Defects Responsible for Lifetime in p-Type Si
  Published in: Defects in Semiconductors 17 (p189)
• DX Centers in Superlattices
  Published in: Physics of DX Centers in GaAs Alloys (p265)
• Electrical Properties of Low Temperature Grown GaAs
  Published in: Defects in Semiconductors 19 (p929)
• Energy Levels Associated with the Metastable State of EL2
  Published in: Defects in Semiconductors 16 (p911)
• EPR Observation of the Arsenic Antisite - Arsenic Vacancy Complex
  Published in: Defects in Semiconductors 14 (p299)
• Fast Neutron Irradiation Induced Defects in High Purity Germanium
  Published in: Defects in Semiconductors 15 (p1233)
• Metastable Defects in Compound Semiconductors
  Published in: Special Defects in Semiconducting Materials (p73)