HomeJ.H. Tucker

Papers by Author: J.H. Tucker

Paper TitlePage

Shallow Thermal Donors in Annealed CZ Silicon and Links to the NL10 EPR Spectrum: The Relevance of H, Al and N Impurities

Authors: R.C. Newman, M.J. Ashwin, R.E. Pritchard, J.H. Tucker, Edward C. Lightowlers, T. Gregorkiewicz, I.S. Zevenbergen, C.A.J. Ammerlaan, Robert J. Falster, M.J. Binns

379

Vibrational Absorption from Oxygen-Hydrogen (O_i-H₂) Complexes in Hydrogenated CZ Silicon

Authors: R.E. Pritchard, M.J. Ashwin, R.C. Newman, J.H. Tucker, Edward C. Lightowlers, M.J. Binns, Robert J. Falster, S.A. McQuaid

283

Oxygen Aggregation Phenomena in Silicon

Authors: R.C. Newman, M.J. Binns, Charalamos A. Londos, S.A. McQuaid, J.H. Tucker

247

Effect of Oxygen Concentration on the Kinetics of Oxygen Loss and Thermal Donor Formation in Silicon at Temperatures between 350° C and 500° C

Authors: Charalamos A. Londos, S.A. McQuaid, M.J. Binns, R.C. Newman, J.H. Tucker

161

The Kinetics of Oxygen Loss and Thermal Donor Formation in Silicon at Temperatures between 350°C and 500°C

Authors: S.A. McQuaid, Charalamos A. Londos, M.J. Binns, R.C. Newman, J.H. Tucker

963

Measurements of the Diffusion Coefficient of Hydrogen in Silicon Monitored by Catalyzed Enhanced Oxygen Diffusion Jumps

Authors: R.C. Newman, J.H. Tucker, S.A. McQuaid

Enhanced Oxygen Diffusion in Silicon at Low Temperatures

Authors: A.K. Tipping, R.C. Newman, D.C. Newton, J.H. Tucker

887