Authors: L. Khomenkova, N. Korsunska, T. Stara, Y. Goldstein, J. Jedrzejewski, E. Savir, C. Sada, Y. Emirov
Abstract: The properties of SiOx layer prepared by magnetron sputtering is studied by photoluminescence Auger and SIMS methods. The depth distribution of emission characteristics and chemical composition is obtained. It is shown that as-sputtered SiOx layers are non-emitted and characterized by homogeneous enough chemical composition. High-temperature annealing in nitrogen atmosphere stimulates not only the Si nanocrystal formation but also the redistribution of silicon and the appearance of Si depleted region near layer-substrate interface. The last process is found to be dependent on excess Si content. It is found that decrease of silicon content in the depth of annealed layers is followed by the decrease of particle sizes that is proved by the blue shift of photoluminescence maximum. The possible reasons of the appearance of Si depleted region are discussed.
7
Authors: I.V. Antonova, D.V. Marin, Vladimir A. Volodin, V.A. Skuratov, J. Jedrzejewski, I. Balberg
Abstract: In the present paper we discuss effects due to high-energy ion bombardment of SiO2 layers with embedded Si nanocrystals (NCs), such as the formation of new Si NCs in such layers, amorphization of previously existing NCs, modification of NC size distribution, and modification of optical and electrical properties of NCs. These effects are identified as resulting from anisotropic strain - anisotropic heating in NCs-SiO2 layers under ion irradiation.
523
Authors: L. Khomenkova, N. Korsunska, T. Stara, Y. Goldstein, J. Jedrzejewski, E. Savir, C. Sada, Y. Emirov
Abstract: The properties of SiOx layer prepared by magnetron sputtering is studied by photoluminescence
Auger and SIMS methods. The depth distribution of emission characteristics and chemical
composition is obtained. It is shown that as-sputtered SiOx layers are non-emitted and characterized
by homogeneous enough chemical composition. High-temperature annealing in nitrogen
atmosphere stimulates not only the Si nanocrystal formation but also the redistribution of silicon
and the appearance of Si depleted region near layer-substrate interface. The last process is found to
be dependent on excess Si content. It is found that decrease of silicon content in the depth of
annealed layers is followed by the decrease of particle sizes that is proved by the blue shift of
photoluminescence maximum. The possible reasons of the appearance of Si depleted region are
discussed.
87
Authors: I.V. Antonova, M.B. Gulyaev, V.A. Skuratov, D.V. Marin, E.V. Zaikina, Z.S. Yanovitskaya, J. Jedrzejewski, I. Balberg
Abstract: Samples with layer of silicon nanocrystals embedded in SiO2 (the single phase Si content
in oxide ranged between 5 and 92 volume %) were subjected to high energy ion implantation.
Implantation-induced modifications of SiO2-ncSi properties discussed in this paper include a shift
of the major ncSi-related photoluminescence peak and intensification of the high-photon energy
peaks, that accompany the change in amount and type of the charge trapped on the nanocrystals. A
unified model is suggested for all these phenomena.
541
Authors: M. Baran, N. Korsunska, L. Khomenkova, T. Stara, V. Khomenkov, Y. Goldstein, E. Savir, J. Jedrzejewski
Abstract: The effect of preparation conditions and annealing treatment on Si-rich-SiOx layers was
investigated. It was observed that oxygen plays important role in the creation of light-emitting
centres. It was found that the emission in the green-orange spectral range is connected with silicon
oxide defects which contain dangling bonds. At the same time PL band in the infrared spectral
range is caused by recombination of carriers in amorphous silicon or nanocrystalline one. It is
shown that modification of defect content under various treatments gives the possibility to control
the emission properties of the layers.
65
Authors: M. Baran, L. Khomenkova, N. Korsunska, T. Stara, Moissei K. Sheinkman, V. Yukhymchuk, V. Khomenkov, Y. Goldstein, J. Jedrzejewski, E. Savir
Abstract: The aging process of silicon nanostructures obtained by magnetron sputtering and electrochemical etching is investigated by photoluminescence and Raman scattering methods. It is shown that oxidation of silicon crystallites takes place in both types of structures and results in appearance of additional emission bands. However the degree of oxidation in etched structures exceeds significantly this value for sputtered samples. It is found that the intensity and spectral position of the emission band caused by exciton recombination in Si crystallites do not change practically during aging in sputtered structures in contrast to etched ones. It is shown that the oxidation of silicon amorphous phase occur during aging in sputtered structures.
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