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Articles by author: J. Lennart Lindström

• A Deep Photoluminescence Band in 4H SiC Related to the Silicon Vacancy
  Published in: Defects in Semiconductors 19 (p685)
• A New Defect Observed in Annealed Phosphorus-Doped Electron-Irradiated Silicon
  Published in: Defects in Semiconductors 16 (p333)
• A New Photoluminescent Center in Mercury-Doped Silicon
  Published in: Defects in Semiconductors 17 (p117)
• Annealing of Electron Irradiated P-, As-, Sb- and Bi-Doped Czochralski Silicon
  Published in: Defects in Semiconductors 17 (p1239)
• Annealing of Irradiated Highly Phosphorous-Doped Czochralski Silicon
  Published in: Defects in Semiconductors 14 (p1087)
• Bound Exciton Recombination in Electron Irradiated 4H-SiC
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p477)
• Calibration Factor for Determination of Interstitial Oxygen Concentration in Germanium by Infrared Absorption
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p735)
• Carbon-Oxygen-Related Complexes in Irradiated and Heat-Treated Silicon: IR Absorption Studies
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p57)
• Divacancy-Oxygen and Trivacancy-Oxygen Complexes in Silicon: Local Vibrational Mode Studies
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIII (p129)
• Electronic Properties and Structure of a Complex Incorporating a Self-Interstitial and two Oxygen Atoms in Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p273)
• Formation of Oxygen Dimers in Silicon during Electron-Irradiation Above 250 °C
  Published in: Defects in Semiconductors 19 (p367)
• Formation of Ultra Shallow Donors in Silicon by Long-Term-Annealing at 470 °C
  Published in: Defects in Semiconductors 19 (p385)
• Infrared Vibrational Bands Related to Thermal Donors in Germanium
  Published in: Gettering and Defect Engineering in Semiconductor Technology VIII (p303)
• Interaction of Hydrogen with Radiation-Induced Defects in Cz-Si Crystals
  Published in: Gettering and Defect Engineering in Semiconductor Technology VIII (p403)
• Interstitial Carbon Related Defects in Low-Temperature Irradiated Si: FTIR and DLTS Studies
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p261)