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Articles by author: J. Lennart Lindström

• Local Vibrational Modes of Weakly Bound O-H Complexes in SI
  Published in: Defects in Semiconductors 19 (p391)
• Metastable VO₂ Complexes in Silicon: Experimental and Theoretical Modeling Studies
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p223)
• New Infrared Vibrational Bands Related to Interstitial and Substitutional Oxygen in Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology VIII (p309)
• Observation of Metastable Defect in Electron Irradiated 6H-SiC
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p561)
• Observation of Rapid Direct Charge Transfer between Deep Defects in Silicon
  Published in: Defects in Semiconductors 17 (p1371)
• Oxygen and Carbon Clustering in Cz-Si during Electron Irradiation at Elevated Temperatures
  Published in: Gettering and Defect Engineering in Semiconductor Technology VIII (p297)
• Oxygen in Silicon
  Published in: Defects in Semiconductors 15 (p579)
• Photoluminescence Characterisation of the Silicon Surface Exposed to Plasma Treatment
  Published in: Defects in Semiconductors 16 (p1445)
• SF₆/0₂ and CF₄/0₂ Reactive-Ion-Etching-Induced Defects in Silicon Studied by Photoluminescence Spectroscopy: Role of Oxygen
  Published in: Defects in Semiconductors 18 (p1807)
• Stable Hydrogen Pair Trapped at Carbon Impurities in Silicon
  Published in: Defects and Diffusion in Semiconductors (p1)
• The Carbon Vacancy Pair in 4H and 6H SiC
  Published in: Silicon Carbide and Related Materials - 1999 (p821)
• The Neutral Silicon Vacancy in 6H and 4H SiC
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p473)
• The Oxygen Dimer in Silicon: Some Experimental Observations
  Published in: Defects in Semiconductors 19 (p361)
• Vibrational Modes of Oxygen Dimers in Germanium
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p105)
• VO_n (n≥3) Defects in Irradiated and Heat-Treated Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p267)