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Articles by author: Jaroslaw Dąbrowski

• Adsorption of Antimony on Si(113) Surfaces: Ab-Initio Calculations and STM Investigations
  Published in: Defects in Semiconductors 18 (p497)
• Defect Metastability in III-V Compounds
  Published in: Defects in Semiconductors 16 (p735)
• Local Stress, Surface Reconstruction, and Bulk Defect Nucleation: An STM Study on Silicon
  Published in: Beam Injection Assessment of Defects in Semiconductors (p261)
• Point Defect Assisted Diffusion in Semiconductors
  Published in: Special Defects in Semiconducting Materials (p23)
• Role of Interstitial Atoms in Microscopic Processes on (113) and (001) Surfaces of Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology VI (p57)
• Structure and Stability of Thin Praseodymium Oxide Layers on Si(001)
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p783)
• The EL2 Defect in GaAs
  Published in: Defects in Semiconductors 15 (p51)
• The Influence of Defects and Impurities on Electrical Properties of High-k Dielectrics
  Published in: Advances in Electronic Materials (p55)
• Vacancy Assisted Diffusion of Si in GaAs: Microscopic Theory
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p269)
• Vacancy-Assisted Diffusion of Si in GaAs: Microscopic Theory
  Published in: Defects in Semiconductors 17 (p1263)
• What Local-Density Calculations Can Teach about Semiconductor Surfaces, Interfaces and Defects
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p51)