HOME
CONTACT
My eBook
Username:
Password:
FULLTEXT SEARCH
NEW:
Advanced Search
MSF
>
Materials Science Forum
KEM
>
Key Engineering Materials
SSP
>
Solid State Phenomena
DDF
>
Defect and Diffusion Forum
AMM
>
Applied Mechanics and Materials
AMR
>
Advanced Materials Research
AST
>
Advances in Science and Technology
JNanoR
>
Journal of Nano Research
JBBTE
>
Journal of Biomimetics, Biomaterials, and Tissue Engineering
JMNM
>
Journal of Metastable and Nanocrystalline Materials
JERA
>
International Journal of Engineering Research in Africa
AEF
>
Advanced Engineering Forum
NH
>
Nano Hybrids
> @scientific.net
CONFERENCE
6/16/2013 - 6/19/2013
The 7th International conference on Physical and Numerical Simulation of Materials Processing
5/16/2013 - 5/19/2013
2nd International Congress on Advanced Materials
4/13/2013 - 4/14/2013
2013 2nd lnternational Conference on lntclligent Materials, Applied Mechanics and Design Science (IMAMD 2013)
more...
Articles by author: Jean Camassel
79 papers on 6 pages:
1
[2]
[3]
...
[6]
[next]
4H-SiC Material for Hall Effect and High-Temperature Sensors Working in Harsh Environments
Published in:
Silicon Carbide and Related Materials 2001
(p1435)
6H-Type Zigzag Faults in Low-Doped 4H-SiC Epitaxial Layers
Published in:
Silicon Carbide and Related Materials 2009
(p347)
8H Stacking Faults in a 4H-SiC Matrix: Simple Unit Cell or Double 3C Quantum Well?
Published in:
Silicon Carbide and Related Materials 2008
(p339)
Advances in Liquid Phase Conversion of (100) and (111) Oriented Si Wafers into Self-Standing 3C-SiC
Published in:
Silicon Carbide and Related Materials 2008
(p49)
AFM and Raman Studies of Graphene Exfoliated on SiC
Published in:
Silicon Carbide and Related Materials 2008
(p215)
Al and Al/C High Dose Implantation in 4H-SiC
Published in:
Silicon Carbide and Related Materials - 1999
(p885)
Aluminium Doping of 4H-SiC Grown with HexaMethylDiSilane
Published in:
Silicon Carbide and Related Materials 2004
(p121)
Atomic-Step Observations on 6H- and 15R-SiC Polished Surfaces
Published in:
Silicon Carbide and Related Materials 2001
(p729)
Characterization of 3C-SiC/SOI Deposited with HMDS
Published in:
Silicon Carbide and Related Materials - 1999
(p599)
Characterization of Bulk <111> 3C-SiC Single Crystals Grown on 4H-SiC by the CF-PVT Method
Published in:
Silicon Carbide and Related Materials 2005
(p99)
Characterization of Thick 2-Inch 4H-SiC Layers Grown by the Continuous Feed-Physical Vapor Transport Method
Published in:
Silicon Carbide and Related Materials 2003
(p91)
Comparative Evaluation of Free-Standing 3C-SiC Crystals
Published in:
Silicon Carbide and Related Materials 2004
(p229)
Comparative Studies of <0001> 4H-SiC Layers Grown with Either Silane or HexaMethylDisilane / Propane Precursor Systems
Published in:
Silicon Carbide and Related Materials 2003
(p217)
Degeneracy Factor and Pressure Dependence of Si-Induced Deep Impurity States in Al
x
Ga
1-x
As from Transport Experiments under Hydrostatic Pressure
Published in:
Defects in Semiconductors 15
(p857)
Differences between Graphene Grown on Si-Face and C-Face
Published in:
Silicon Carbide and Related Materials 2009
(p581)
Username:
Password: