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Articles by author: Jean Camassel

• 4H-SiC Material for Hall Effect and High-Temperature Sensors Working in Harsh Environments
  Published in: Silicon Carbide and Related Materials 2001 (p1435)
• 6H-Type Zigzag Faults in Low-Doped 4H-SiC Epitaxial Layers
  Published in: Silicon Carbide and Related Materials 2009 (p347)
• 8H Stacking Faults in a 4H-SiC Matrix: Simple Unit Cell or Double 3C Quantum Well?
  Published in: Silicon Carbide and Related Materials 2008 (p339)
• Advances in Liquid Phase Conversion of (100) and (111) Oriented Si Wafers into Self-Standing 3C-SiC
  Published in: Silicon Carbide and Related Materials 2008 (p49)
• AFM and Raman Studies of Graphene Exfoliated on SiC
  Published in: Silicon Carbide and Related Materials 2008 (p215)
• Al and Al/C High Dose Implantation in 4H-SiC
  Published in: Silicon Carbide and Related Materials - 1999 (p885)
• Aluminium Doping of 4H-SiC Grown with HexaMethylDiSilane
  Published in: Silicon Carbide and Related Materials 2004 (p121)
• Atomic-Step Observations on 6H- and 15R-SiC Polished Surfaces
  Published in: Silicon Carbide and Related Materials 2001 (p729)
• Characterization of 3C-SiC/SOI Deposited with HMDS
  Published in: Silicon Carbide and Related Materials - 1999 (p599)
• Characterization of Bulk <111> 3C-SiC Single Crystals Grown on 4H-SiC by the CF-PVT Method
  Published in: Silicon Carbide and Related Materials 2005 (p99)
• Characterization of Thick 2-Inch 4H-SiC Layers Grown by the Continuous Feed-Physical Vapor Transport Method
  Published in: Silicon Carbide and Related Materials 2003 (p91)
• Comparative Evaluation of Free-Standing 3C-SiC Crystals
  Published in: Silicon Carbide and Related Materials 2004 (p229)
• Comparative Studies of <0001> 4H-SiC Layers Grown with Either Silane or HexaMethylDisilane / Propane Precursor Systems
  Published in: Silicon Carbide and Related Materials 2003 (p217)
• Degeneracy Factor and Pressure Dependence of Si-Induced Deep Impurity States in Al_xGa_1-xAs from Transport Experiments under Hydrostatic Pressure
  Published in: Defects in Semiconductors 15 (p857)
• Differences between Graphene Grown on Si-Face and C-Face
  Published in: Silicon Carbide and Related Materials 2009 (p581)