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Articles by author: Jeffery L. Wyatt

• 6H and 4H-SiC Avalanche Photodiodes
  Published in: Silicon Carbide and Related Materials 2008 (p869)
• Experimental Investigation and Simulation of Silicon Droplets Formation during SiC CVD Epitaxial Growth
  Published in: Silicon Carbide and Related Materials 2004 (p105)
• Homoepitaxial Growth of 4H-SiC Using CH₃Cl Carbon Precursor
  Published in: Silicon Carbide and Related Materials 2004 (p81)
• Improved Resolution of Epitaxial Thin Film Doping Using FTIR Reflectance Spectroscopy
  Published in: Silicon Carbide and Related Materials 2004 (p397)
• Investigation of the Mechanism and Growth Kinetics of Homoepitaxial 4H-SiC Growth Using CH₃Cl Carbon Precursor
  Published in: Silicon Carbide and Related Materials 2005 (p171)
• Low-Temperature Halo-Carbon Homoepitaxial Growth of 4H-SiC: Morphology, Doping, and Role of HCl Additive
  Published in: Silicon Carbide and Related Materials 2006 (p133)
• New Photoluminescence Features in 4H-SiC Induced by Hydrogenation
  Published in: Silicon Carbide and Related Materials - 2002 (p313)