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Articles by author: John W. Steeds

• A Combined Photoluminescence and Electron Paramagnetic Resonance Study of Low Energy Electron Irradiated 4H SiC
  Published in: Silicon Carbide and Related Materials 2005 (p477)
• A Study of the D_II Defect after Electron Irradiation and Annealing of 4H SiC
  Published in: Silicon Carbide and Related Materials 2006 (p319)
• Anti-Site Defects are Found at Large Distances from Localised H and He Ion Implantations
  Published in: Silicon Carbide and Related Materials 2008 (p409)
• Cathodoluminescence Microscopy of Square Facets in Chemial Vapour Deposited Diamond Films and its Use in Stress Determination
  Published in: Polycrystalline Semiconductors IV (p271)
• Differentiation between C and Si Related Damage Centres in 4H- and 6H-SiC by the Use of 90-300 kV Electron Irradiation Followed by Low Temperature Photoluminescence Microscopy
  Published in: Silicon Carbide and Related Materials 2000 (p381)
• Dislocation-Related Absorption, Photoluminescence and Birefringence in Deformed n-ZnSe Crystals
  Published in: Polycrystalline Semiconductors IV (p93)
• Examination of Two P-Type 4H SiC Samples Having Similar Resistivity but Very Different Radiation Damage and Annealing Characteristics
  Published in: Silicon Carbide and Related Materials 2010 (p173)
• Further Investigation of Silicon Vacancy-Related Luminescence in 4H and 6H SiC
  Published in: Silicon Carbide and Related Materials 2003 (p561)
• Growth and Characterization of ¹³C Enriched 4H-SiC for Fundamental Materials Studies
  Published in: Silicon Carbide and Related Materials 2006 (p13)
• High Energy Local Vibrational Modes of Carbon Aggregates in SiC: Experimental and Theoretical Insight
  Published in: Silicon Carbide and Related Materials 2005 (p465)
• Identification of Dumb-Bell Shaped Interstitials in Electron Irradiated 6H SiC by Photoluminescence Spectroscopy
  Published in: Silicon Carbide and Related Materials - 2002 (p305)
• Identification of Neutral Carbon Vacancy-Carbon Anti-Site Complex by Low Temperature Photoluminescence Spectroscopy
  Published in: Silicon Carbide and Related Materials 2007 (p437)
• Investigation of the Displacement Threshold of Si in 4H SiC
  Published in: Silicon Carbide and Related Materials 2005 (p481)
• Long Distance Point Defect Migration in Irradiated SiC Observed by Deep Level Transient Spectroscopy
  Published in: Silicon Carbide and Related Materials 2005 (p485)
• Low Temperature Annealing of Optical Centres in 4H SiC
  Published in: Silicon Carbide and Related Materials 2003 (p637)