Papers by Author: Jong Ho Lee

Abstract: Planar MESFETs were fabricated on high-purity semi-insulating (HPSI) 4H-SiC substrates. The saturation drain current of the fabricated MESFETs with a gate length of 0.5 μm and a gate width of 100 μm was 430 mA/mm, and the transconductance was 25 mS/mm. The maximum oscillation frequency and cut-off frequency were 26.4 GHz and 7.2 GHz, respectively. The power gain was 8.4 dB and the maximum output power density was 2.8 W/mm for operation of class A at CW 2 GHz. MESFETs on HPSI substrates showed no current instability and much higher output power density in comparison to MESFETs on vanadium-doped SI substrates.

Abstract: We have investigated the electrical properties of metal-oxide-semiconductor (MOS) capacitors with atomic-layer-deposited La2O3, thermal-nitrided SiO2, and atomic-layer-deposited La2O3/thermal-nitrided SiO2 on n-type 4H-SiC. A significant reduction in leakage current density has been observed in La2O3 structure when a 6-nm thick thermal nitrided SiO2 has been sandwiched between the La2O3 and SiC. However, this reduction is still considered high if compared to sample having thermal-nitrided SiO2 alone. The reasons for this have been explained in this paper.

Abstract: The authors attempted to grow a semi-insulating SiC epitaxial layer by in-situ vanadium doping. The homoepitaxial growth of the vanadium-doped 4H-SiC layer was performed by MOCVD using the organo-silicon precursor, bis-trimethylsilylmethane (BTMSM, [C7H20Si2]) and the metal-organic precursor, bis-cyclopentadienylvanadium (Verrocene, [C10H10V]). Vanadium doping effect on crystallinity of epilayer was very destructive. Vanadium-doped epilayers grown on normal condition had various surface or crystal defects such as micropipes, polytype inclusions. But this crystallinity degradation was overcome by high growth temperature. For the measurement of the resistivity of the highly resistive vanadium-doped 4H-SiC epilayers, the authors used the on-resistance technique. Based on the measurements of the on-resistance of the epilayers using the current-voltage technique, it is shown that the residual donor concentration of the epilayers was decreased with increasing partial pressure of verrocene. The resistivity of the vanadium-doped 4H-SiC epilayer was about 107 /cm.

Abstract: 4H-SiC planar MESFETs were fabricated using ion-implantation on high-purity semi-insulating substrate, and their DC and RF performances were characterized. A modified RCA method was used to clean the substrate before each procedure. Sacrificial oxide was grown after channel layer etching to eliminate plasma damage to the gate region. A thin, thermal oxide layer was grown to passivate the surface and then a thick field oxide was deposited by CVD. The maximum oscillation frequency of 26.4 GHz and the cut-off frequency of 7.2 GHz were obtained. The power gain was 8.4 dB and the output power was 2.8 W/mm at 2 GHz.

Abstract: Ti/4H-SiC Schottky barrier diodes were fabricated under 500, 750, 1000 °C thermal treatment conditions. After the heat treatment at 750 °C, formation of TiC(111) and Ti5Si3(210) phases was confirmed by XRD analysis. Formation of Ti carbide and silicide phase increased breakdown voltage VB from 545 V to 830 V. An improvement of breakdown voltage (VB) was observed in case of the thermal treatment in nitrogen ambient at 750 °C for 2 min. Ideality factor (n), specific on resistance (Ron), and Schottky barrier height (Φb) were 1.04, 2.7 m-cm2, 1.33 eV respectively.

Abstract: Porous composites containing ceramic fiber have been developed for the fabrication of SOFC seals. They were fabricated using glass powder and alumino-silicate chopped fibers. Effect of mixing ratios of ceramic fiber and glass on the leak rates and strength of the composite seals was investigated. In addition, seal performance of commercial glasses was compared with that of SiO2-BaO-B2O3 glass synthesized in this work. The leak rate of the composite seals containing 55 vol% glass was seven times higher than the one containing 75 vol% glass. The flexural strength of the composite seals was reduced to one fourth of the initial value as the porosity increased from 1 to 29%. The incorporation of alumino-silicate chopped fibers into a sealing glass degraded room temperature strength and increased leak rates due to increase in porosity with increasing fiber content. The viscosity of glass at the seal test temperature is presumed to affect the leak rate of the glass seal.

Abstract: A novel Ni-YSZ anode with interpenetrating phase composite (IPC) structure was developed using NiO-YSZ core-shell composite powder and evaluated in terms of microstructure, electrical conductivity, thermal expansion and flexural strength. In comparison to conventional anode, the anodic performance of IPC anode appeared to be more desirable for improving structural reliability of SOFC unit cells and stacks. This study reveals that the anodic performance of IPC anode can be readily tailored by controlling core-shell composite powder particles.

Abstract: Thermoset molding in wet and dry state was successfully employed to fabricate high strength reaction bonded silicon carbide (RBSC) ceramics. Granule transfer molding (GCM) was developed to prevent segregation of component particles and binder phase in wet state, while granule compression molding was applied in dry state to fabricate green compact with significant variation of compaction ratio. Low-fill density granules with mixing homogeneity were critical for promoting lateral deformation of granules during consolidation. In addition, anodic performance of Ni-YSZ anode was significantly enhanced by replacing solid fugitive phase with viscoelastic fugitive phase used as binder in thermoset molding.

Abstract: In the surface machining of brittle materials, there exists a transition from brittle to ductile modes when the depth of cut is reduced below a critical size using ultrafine abrasive grains. Vitrified grinding wheels containing ultrafine abrasives in the sub-micrometer to nanometer range were fabricated by mechanochemically milling nanoabrasive particles and subsequent viscous sintering of abrasive-binder composites. The grinding characteristics of the nanoabrasive grinding wheels were evaluated for the fine grinding of silicon wafers in terms of a variety of variables. Preliminary wafer grinding results are presented on material removal rate and surface quality of silicon wafers.

Abstract: High strength reaction-bonded silicon carbide ceramics was successfully produced by reducing the amount of residual silicon and the silicon pocket size with carbon black as an additional carbon source. A prototype of wafer carrier was also produced in near-net dimension by planar contact infiltration of molten silicon into a preform joined with six pieces of simple shape by eliminating process shrinkages. Forming shrinkages were decreased to a negligible level by compression molding, while sintering shrinkage was eliminated by reactive infiltration of molten silicon.