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Articles by author: Jürgen Wollweber

• Combining RBS and FTIR Spectroscopy for the Ge Analysis in Si_1-xGe_x Single Crystals
  Published in: Materials Science Applications of Ion Beam Techniques (p377)
• Composition Dependence of Hardness and Elastic Modulus in Si-Ge Measured by Nanoindentation - Possible Consequences for Elasto-Plastic Relaxation and Diffusion
  Published in: Gettering and Defect Engineering in Semiconductor Technology VI (p509)
• Electron Paramagnetic Resonance of Phosphorus, Platinum, and Iron in Float Zone Si_1-x Ge_x Crystals
  Published in: Defects in Semiconductors 18 (p359)
• Electronic Properties of Zn in Si_1-xGe_x Alloys: A Basis for Studying Zn Diffusion in SiGe
  Published in: Diffusion in Materials DIMAT 1996 (p1141)
• Growth of 3C SiC Single Crystals from Convection Dominated Melts
  Published in: Silicon Carbide and Related Materials - 1999 (p119)
• Growth Related Distribution of Secondary Phase Inclusions in 6H-SiC Single Crystals
  Published in: Silicon Carbide and Related Materials 2000 (p29)
• Macrodefect Generation in SiC Single Crystals Caused by Polytype Changes
  Published in: Silicon Carbide and Related Materials 2001 (p67)
• Model for Macroscopic Slits in 6H- and 4H-SiC Single Crystals
  Published in: Silicon Carbide and Related Materials 2001 (p63)
• Morphology of Sublimation Grown 6H-SiC(000-1) Surfaces
  Published in: Silicon Carbide and Related Materials 2000 (p243)
• On the Early Stages of Sublimation Growth of 4H-SiC Using 8° Off-Oriented Substrates
  Published in: Silicon Carbide and Related Materials - 2002 (p17)
• Properties of Nitrogen-Doped 4H-SiC Single Crystals Grown by Physical Vapor Transport
  Published in: Silicon Carbide and Related Materials - 2002 (p91)
• PVT-Growth and Characterization of Single Crystalline 3C-SiC on a (0001) 6H-SiC Substrate
  Published in: Silicon Carbide and Related Materials 2004 (p319)
• Source Material Related Distribution of Defects in 6H-SiC Single Crystals
  Published in: Silicon Carbide and Related Materials 2000 (p263)
• Stable Parameter Range for 3C-SiC Sublimation Growth on Graphite
  Published in: Silicon Carbide and Related Materials 2003 (p143)
• Study of Nitrogen Incorporation in 6H-SiC Single Crystals Grown by PVT
  Published in: Silicon Carbide and Related Materials - 1999 (p87)