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Articles by author: Kazuo Arai

• 1270V, 1.21mΩ·cm² SiC Buried Gate Static Induction Transistors (SiC-BGSITs)
  Published in: Silicon Carbide and Related Materials 2007 (p1071)
• 2-Inch 4H-SiC Homoepitaxial Layer Grown on On-Axis C-Face Substrate by CVD Method
  Published in: Silicon Carbide and Related Materials 2004 (p93)
• 4.3 mΩcm², 1100 V 4H-SiC Implantation and Epitaxial MOSFET
  Published in: Silicon Carbide and Related Materials 2005 (p1281)
• 4H Silicon Carbide Etching Using Chlorine Trifluoride Gas
  Published in: Silicon Carbide and Related Materials 2007 (p655)
• 4H-SiC Carbon-Face Epitaxial Layers Grown by Low-Pressure Hot-Wall Chemical Vapor Deposition
  Published in: Silicon Carbide and Related Materials 2003 (p209)
• 4H-SiC p-Channel MOSFETs with Epi-Channel Structure
  Published in: Silicon Carbide and Related Materials 2007 (p711)
• 980 V, 33A Normally-Off 4H-SiC Buried Gate Static Induction Transistors
  Published in: Silicon Carbide and Related Materials 2010 (p662)
• A Large Reduction in Interface-State Density for MOS Capacitor on 4H-SiC (11-2 0) Face Using H₂ and H₂O Vapor Atmosphere Post-Oxidation Annealing
  Published in: Silicon Carbide and Related Materials 2001 (p1057)
• A Method of Reducing Micropipes in Thin Films by Using Sublimation Growth
  Published in: Silicon Carbide and Related Materials 2001 (p107)
• Analyses of High Leakage Currents in Al⁺ Implanted 4H SiC pn Diodes Caused by Threading Screw Dislocations
  Published in: Silicon Carbide and Related Materials 2009 (p913)
• Analysis of Low On-Resistance in 4H-SiC Double-Epitaxial MOSFET
  Published in: Silicon Carbide and Related Materials 2004 (p813)
• Breakdown Electric Field in 4H-SiC Epitaxial Layer Grown on Various Net-Doping Substrates
  Published in: Silicon Carbide and Related Materials - 2002 (p435)
• Challenges of 4H-SiC MOSFETs on the C(000-1) Face toward the Achievement of Ultra Low On-Resistance
  Published in: Silicon Carbide and Related Materials 2007 (p907)
• Channel Engineering of Buried-Channel 4H-SiC MOSFET Based on the Mobility Model of the Oxide/4H-SiC Interface
  Published in: Silicon Carbide and Related Materials 2001 (p1081)
• Characterization of Electric Discharge Machining for Silicon Carbide Single Crystal
  Published in: Silicon Carbide and Related Materials 2007 (p855)