Papers by Author: Kiyoshi Tone

Paper TitlePage

6A, 1kV 4H-SiC Normally-Off Trenched-and-Implanted Vertical JFETs
Authors: Jian Hui Zhao, Kiyoshi Tone, Larry X. Li, Peter Alexandrov, Leonid Fursin, M. Weiner
1213
High Voltage (500V-14kV) 4H-SiC Unipolar Bipolar Darlington Transistors for High-Power and High-Temperature Applications
Authors: Jian Hui Zhao, Larry X. Li, Kiyoshi Tone, Peter Alexandrov, Leonid Fursin, J. Carter, M. Weiner
957
A Novel High-Voltage Normally-Off 4H-SiC Vertical JFET
Authors: Jian Hui Zhao, Larry X. Li, Kiyoshi Tone, Peter Alexandrov, M. Pan, M. Weiner
1223
Searching for Device Processing Compatible Ohmic Contacts to Implanted p-Type 4H-SiC
Authors: Yan Bin Luo, Feng Yan, Kiyoshi Tone, Jian Hui Zhao, John Crofton
1013
Microscopic Probing of Raman Scattering and Photoluminescence on C-Al Ion Co-Implanted 6H-SiC
Authors: Zhe Chuan Feng, Soo Jin Chua, Ze Xiang Shen, Kiyoshi Tone, Jian Hui Zhao
659
Theoretical and Experimental Study of 4H-SiC Junction Edge Termination
Authors: Xue Qing Li, Kiyoshi Tone, Li Hui Cao, Peter Alexandrov, Leonid Fursin, Jian Hui Zhao
1375
Fabrication and Testing of 1,000V-60A 4H-SiC MPS Diodes in an Inductive Half-Bridge Circuit
Authors: Kiyoshi Tone, Jian Hui Zhao, M. Weiner, M. Pan
1187
Fabrication and Characterization of 4H-SiC GTOs and Diodes
Authors: Leonid Fursin, Kiyoshi Tone, Yan Bin Luo, Peter Alexandrov, Li Hui Cao, Jian Hui Zhao, M. Weiner, M. Pan
1399
Effects of Al-C Ion-Implantation and Annealing in Epitaxial 6H-SiC Studied by Structural and Optical Techniques
Authors: Zhe Chuan Feng, Ian T. Ferguson, R.A. Stall, K. Li, Y. Shi, H. Singh, Kiyoshi Tone, Jian Hui Zhao, A.T.S. Wee, K.L. Tan, F. Adar, B. Lenain
693
Electrical Characterization of p-Type 6H-SiC Layers Created by C and Al Co-implantation
Authors: Kiyoshi Tone, S.R. Weiner, Jian Hui Zhao
689
Showing 1 to 10 of 10 Paper Titles