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Articles by author: Kurt Semmelroth

• Concentration of N and P in SiC Investigated by Time-Of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS)
  Published in: Silicon Carbide and Related Materials 2004 (p453)
• Electrical and Optical Characterization of SiC
  Published in: Silicon Carbide and Related Materials - 2002 (p365)
• Electronic Raman Studies of Shallow Donors in Silicon Carbide
  Published in: Silicon Carbide and Related Materials 2005 (p579)
• Experimental Determination of the Phonon-Eigenvectors of Silicon Carbide by Raman Spectroscopy
  Published in: Silicon Carbide and Related Materials 2001 (p625)
• Growth of 3C-SiC Bulk Material by the Modified Lely Method
  Published in: Silicon Carbide and Related Materials 2003 (p151)
• Growth of Highly Aluminum-Doped p-type 6H-SiC Single Crystals by the Modified Lely Method
  Published in: Silicon Carbide and Related Materials 2000 (p45)
• Growth of Phosphorus-Doped 6H-SiC Single Crystals by the Modified Lely Method
  Published in: Silicon Carbide and Related Materials - 2002 (p63)
• Impurity Conduction in Silicon Carbide
  Published in: Silicon Carbide and Related Materials 2006 (p367)
• Impurity Conduction Observed in Al-Doped 6H-SiC
  Published in: Silicon Carbide and Related Materials 2003 (p685)
• Ionization Energies of Phosphorus Donors in 6H-SiC
  Published in: Silicon Carbide and Related Materials 2007 (p441)
• Microstructure of Cubic SiC Grown by the Modified Lely-Method
  Published in: Silicon Carbide and Related Materials 2003 (p147)
• New Aspects in n-type Doping of SiC with Phosphorus
  Published in: Silicon Carbide and Related Materials 2005 (p609)
• Study of the Temperature Induced Polytype Conversion in Cubic CVD SiC by Raman Spectroscopy
  Published in: Silicon Carbide and Related Materials 2003 (p617)