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Papers by Author: L. Bouwhuis

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Relationship between Donor Activation and Defect Annealing in 6H-SiC Hot-Implanted with Phosphorus Ions

Authors: Takeshi Ohshima, Akira Uedono, Hisayoshi Itoh, Masahito Yoshikawa, Kazutoshi Kojima, Sohei Okada, Isamu Nashiyama, L. Bouwhuis, Shoichiro Tanigawa, Thomas Frank, Gerhard Pensl

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Study of Thermal Annealing of Vacancies in Ion Implanted 3C-SiC by Positron Annihilation

Authors: Takeshi Ohshima, Akira Uedono, Hisayoshi Itoh, L. Bouwhuis, Ryoichi Suzuki, Toshiyuki Ohdaira, Y. Aoki, Masahito Yoshikawa, Tomohisa Mikado, Hajime Okumura, Sadafumi Yoshida, Shoichiro Tanigawa, Isamu Nashiyama

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Hot-Implantation of Phosphorus Ions into 6H-SiC

Authors: L. Bouwhuis, Takeshi Ohshima, Hisayoshi Itoh, Y. Aoki, Masahito Yoshikawa, Isamu Nashiyama, Motohiro Iwami

721

Morphology Control of Vinyl Ester / SEBS Blends with Ultrafine Inorganic Particles

Authors: Masaya Kotaki, T. Kuriyama, I. Narisawa, Mototsugu Sakai, L. Bouwhuis

Gettering of Low Concentration Copper, Nickel and Iron Contamination in Czochralski Silicon Wafers

Authors: Z. Laczik, L. Bouwhuis, G.R. Booker, Robert J. Falster

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