Papers by Author: L.I. Murin

Abstract: Defects induced in silicon crystals by irradiations with 6 MeV electrons in the temperature range 60 to 500 oC have been studied by means of deep level transient spectroscopy (DLTS) and high-resolution Laplace DLTS. Diodes for the study were fabricated on n-type epitaxially grown Si wafers. The DLTS spectra for the samples irradiated at elevated temperatures were compared with those for samples, which were subjected to irradiation at 60 oC and subsequent isochronal anneals in a furnace. The dominant radiation-induced defects in the samples irradiated at temperatures lower than 400 oC were found to be vacancy-oxygen (VO) and interstitial carbon – interstitial oxygen (CiOi) complexes. The introduction rates of the VO and CiOi centers increased about twice upon raising the irradiation temperature from 50 to 400 oC. It is argued that this effect is associated with either a) the suppression of the annihilation rate of Frenkel pairs or b) a decrease in the threshold energy for displacement of a host Si atom upon increase in the irradiation temperature. Transformations of deep level traps due to divacancies (V2) and trivacancies (V3) to V2-oxygen and V3-oxygen complexes were found to occur upon irradiation or annealing at temperatures exceeding 250 oC. A clear anti-correlation between changes in the minority carrier life time induced in the p+-n diodes by irradiation at different temperatures and changes in the concentrations of radiation-induced vacancy- and vacancy-oxygen-related complexes was found.

Abstract: DLTS studies of transformation kinetics of different carbon–related complexes in electron irradiated n- and p-type silicon have been performed. It has been found that silicon self-interstitials have very low mobility even at room temperature in p-Si, but become extremely mobile under elec-tron injection. It is shown that upon annealing of interstitial carbon in p-Si a metastable state for interstitial carbon-interstitial oxygen complex is formed. This state has an energy level of about Еv+0.36 eV. The formation of the stable and metastable states takes place concurrently. The observed features of the carbon-related complexes formation are likely related to the existence of different crystallographic orientation of the equiprobable pathways through which the interstitial carbon and oxygen atoms can approach each other.

Abstract: Fourier transform infrared absorption spectroscopy was used to study the evolution of multivacancy-oxygen-related defects in the temperature range 200-300 °C in Czochralski-grown Si samples irradiated with MeV electrons or neutrons. A clear correlation between disappearance of the divacancy (V2) related absorption band at 2767 cm-1 and appearance of two absorption bands positioned at 833.4 and 842.4 cm-1 at 20 K (at 825.7 and 839.1 cm-1 at room temperature) has been found. Both these two emerging bands have previously been assigned to a divacancy-oxygen defect formed via interaction of mobile V2 with interstitial oxygen (Oi) atoms. The present study shows, however, that the two bands arise from different defects since the ratio of their intensities depends on the type of irradiation. The 842.4 cm-1 band is much more pronounced in neutron irradiated samples and we argue that it is related to a trivacancy-oxygen defect (V3O) formed via interaction of mobile V3 with Oi atoms or/and interaction of mobile V2 with VO defects.

Abstract: Intensities of infrared absorption due to asymmetric stretching vibrations of interstitial oxygen atoms in Ge crystals enriched with 16O and 18O isotopes have been compared with oxygen concentrations determined by means of secondary ion mass spectrometry (SIMS). For Ge samples with oxygen content less than 5⋅1017 cm-3 a good correlation has been found between the values of oxygen concentration and values of absorption coefficient in maximum of the absorption band at 855.6 cm-1 with a proportionality coefficient CO = 0.95.1017 сm-2. It is argued that kinetics of oxygen-related thermal double donor formation and oxygen loss upon heat-treatments of Ge crystals at 350 оС cannot be described properly with the application of calibration coefficient CO = 5.1016 cm-2, which is widely used for the determination of oxygen concentration in Ge crystals.

Abstract: The electronic properties and structure of a complex incorporating a self-interstitial (I) and two oxygen atoms are presented by a combination of deep level transient spectroscopy (DLTS), infrared absorption spectroscopy and ab-initio modeling studies. It is argued that the IO2 complex in Si can exist in four charge states (IO− 2 , IO02 , IO+ 2 , and IO++ 2 ). The first and the second donor levels of the IO2 complex show an inverted location order in the gap, leading to a E(0/ + +) occupancy level at Ev + 0.255 eV. Activation energies for hole emission, transformation barriers between different structures, and positions of LVM lines for different configurations and charge states have been determined. These observables were calculated by density-functional calculations, which show that they are accounted for if we consider at least two charge-dependent defect structures.

Abstract: Local vibrational mode (LVM) spectroscopy has been used to study the evolution of vacancy-oxygen-related defects (VOn) in the temperature range 300-700°C in carbon-lean Cz-Si samples irradiated with MeV electrons or neutrons. New experimental data confirming an attribution of the absorption bands at 910, 976 and 1105 cm-1 to the VO3 complex are obtained. In particular, a correlated generation of VO3 and the oxygen trimer is observed upon irradiation of Cz- Si crystals in the temperature range 300-400°C. Strong evidence for the assignment of the bands at 991 and 1014 cm-1 to a VO4 defect is presented. The lines are found to develop very efficiently in the VO2 containing materials enriched with the oxygen dimer. In such materials the formation of VO4 is enhanced due to occurrence of the reaction O2i+VO2 ⇒ VO4. Annealing of the VO3 and VO4 defects at T ≥ 550C °C is found to result in the appearance of new defects giving rise to a number of O-related LVM bands in the range 990-1110 cm-1. These bands are suggested to arise from VO5 and/or VO6 defects. Similar bands also appear upon the annihilation of oxygen-related thermal double donors at 650°C in Cz-Si crystals pre-annealed at 450°C.

Abstract: The evolution of radiation-induced carbon-related defects in low temperature irradiated oxygen containing silicon has been studied by means of Fourier transform infrared absorption spectroscopy (FTIR) and deep level transient spectroscopy (DLTS). FTIR measurements have shown that annealing of interstitial carbon atom Ci, occurring in the temperature interval 260-300 K, results in a gradual appearance of a number of new absorption bands along with the well known bands related to the CiOi complex. The new bands are positioned at 812, 910.2, 942.6, 967.4 and 1086 cm-1. It has been found that the pair of bands at 910 and 942 cm-1 as well as another set of the bands at 812, 967.4 and 1086 cm-1 display identical behavior upon isochronal annealing, i.e. the bands in both groups appear and disappear simultaneously. The disappearance of the first group occurs at T = 285-300 K while the second group anneals out at T = 310-340 K. These processes are accompanied by an increase in intensity of the bands related to CiOi. It is suggested that intermediate states (precursors) are formed upon the transformation from a single (isolated) Ci atom to a stable CiOi defect. The results obtained in DLTS studies are in agreement with the FTIR data and show unambiguously the formation of CiOi precursors with slightly lower activation energy for the hole emission as compare to that for the main CiOi state.

Abstract: Deep states produced during γ irradiation of germanium have been compared with the defects produced by 1 and 3MeV silicon ion implantation. The deep states have been studied using DLTS and Laplace DLTS techniques. Isochronal annealing has been used to investigate the defect evolution and stability over the range 100 to 500°C. It is found that while irradiation damage can be removed with a very low thermal budget, the implantation damage is more complex and much more difficult to remove. By comparing low (1010cm-2) and high (1012cm-2) implantation doses it appears that both the complexity and stability of defects increases with increasing dose. Similar experiments have been performed on Ge rich Si1-xGex (x=0.992). The focus of this work has been on vacancy related defects. It is believed that the diffusion of both acceptors and donors is vacancy mediated in Ge and so vacancy clusters rather than interstitial clusters are expected to be the technologically significant defect in enhanced diffusion. The significance in terms of junction leakage and generation currents are discussed in the paper in the context of the observed defect reactions.

Abstract: We report on a combined experimental and theoretical study of the metastable form of the vacancy-dioxygen defect in Si labeled VO∗ 2. Important new experimental observations are the detection of mixed local vibrational modes of VO∗ 2 in 16O,18O co-doped samples, the determination of the position of LVM bands for the negatively charged defect, and an assignment of an acceptor level at about Ec − 0.05 eV. Defect energetics, electrical levels and LVM frequencies of the VO∗ 2 complex are also investigated by ab-initio density-functional modeling.We find it to be a bistable defect which accounts well for the experimental data. The metastable form produces an acceptor state at 0.05 eV below Ec, and can be thought of as a VO defect perturbed by interstitial oxygen.