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Papers by Author: L. Kadinski

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Numerical Simulation of Thermal Stress Formation During PVT-Growth of SiC Bulk Crystals

Authors: M. Selder, L. Kadinski, F. Durst, Thomas L. Straubinger, Peter J. Wellmann, Dieter Hofmann

Defect Reduction in Sublimation Grown Silicon Carbide Crystals by Adjustment of Thermal Boundary Conditions

Authors: Erwin Schmitt, Michael Rasp, Arnd Dietrich Weber, M. Kölbl, Robert Eckstein, L. Kadinski, M. Selder

Impact of SiC Source Material on Temperature Field and Vapor Transport During SiC PVT Crystal Growth Process

Authors: Peter J. Wellmann, Dieter Hofmann, L. Kadinski, M. Selder, Thomas L. Straubinger, Albrecht Winnacker

Digital X-Ray Imaging of SiC PVT Process: Analysis of Crystal Growth and Powder Source Degradation

Authors: Peter J. Wellmann, Matthias Bickermann, Dieter Hofmann, L. Kadinski, M. Selder, Thomas L. Straubinger, Albrecht Winnacker

Global Numerical Simulation of Heat and Mass Transfer during SiC Bulk Crystal PVT Growth

Authors: M. Selder, L. Kadinski, F. Durst, Thomas L. Straubinger, Dieter Hofmann, Peter J. Wellmann

Growth Rate Control in SiC-Physical Vapor Transport Method Through Heat Transfer Modeling and Non-Stationary Process Conditions

Authors: Thomas L. Straubinger, Matthias Bickermann, M. Grau, Dieter Hofmann, L. Kadinski, Stephan G. Müller, M. Selder, Peter J. Wellmann, Albrecht Winnacker

Modelling of the PVT-SiC Bulk Growth Process Taking into Account Global Heat Transfer, Mass Transport and Heat of Crystallization and Results on its Experimental Verification

Authors: Stephan G. Müller, Robert Eckstein, Dieter Hofmann, L. Kadinski, P. Kaufmann, M. Kölbl, Erwin Schmitt