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Papers by Author: M. Gong

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Identities of the Deep Level Defects E₁/E₂ in 6H Silicon Carbide

Authors: C.C. Ling, X.D. Chen, M. Gong, H.M. Weng, D.S. Hang, C.D. Beling, S. Fung, T.W. Lam, C.H. Lam

135

Positron-Electron Autocorrelation Function Study of E-Center in Phosphorus-Doped Silicon

Authors: K.F. Ho, C.D. Beling, S. Fung, M. Biasini, Gabriel Ferro, M. Gong

111

Recent Advances in Defect Characterization in 6H-SiC Using Deep Level Transient Spectroscopy and Positron Annihilation Spectroscopy

Authors: C.C. Ling, C.D. Beling, M. Gong, X.D. Chen, S. Fung

1

Positron Mobility in Semi-Insulating 4H-SiC

Authors: C.D. Beling, S. Fung, S.H. Cheung, M. Gong, C.C. Ling, Y.F. Hu, Gerhard Brauer

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