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Articles by author: M. Zhang

• Change in Free Volume at Low Temperature in PET Probed by Positron Annihilation
  Published in: Positron Annihilation - ICPA-12 (p355)
• Deformation of 4H-SiC Single Crystals Oriented for Prism Slip
  Published in: Silicon Carbide and Related Materials 2003 (p371)
• Generation of Stacking Faults in Highly Doped n-Type 4H-SiC Substrates
  Published in: Silicon Carbide and Related Materials 2003 (p759)
• Growth of Hydrogenated Amorphous Silicon in Electron Cyclotron Resonance Plasma
  Published in: Hydrogenated Amorphous Silicon (p135)
• Residual Stresses and Stacking Faults in n-Type 4H-SiC Epilayers
  Published in: Silicon Carbide and Related Materials 2003 (p529)
• SiC Studied Via LEEN and Cathodoluminescence Spectroscopy
  Published in: Silicon Carbide and Related Materials 2003 (p543)
• Spectra Associated with Stacking Faults in 4H-SiC Grown in a Hot-Wall CVD Reactor
  Published in: Silicon Carbide and Related Materials 2001 (p589)
• Study of Polytype Switching vs. Micropipes in PVT Grown SiC Single Crystals
  Published in: Silicon Carbide and Related Materials 2003 (p51)
• TEM of Dislocations in Forward-Biased 4H-SiC PiN Diodes
  Published in: Silicon Carbide and Related Materials 2003 (p359)
• The Brittle-to-Ductile Transition in 4H-SiC
  Published in: Silicon Carbide and Related Materials 2001 (p767)