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Articles by author: Maher Soueidan

• 3C-SiC Islands Formation on 6H-SiC(0001) Substrate from a Liquid Phase
  Published in: Silicon Carbide and Related Materials 2007 (p203)
• Boron Doping during Vapor-Liquid-Solid Growth of Homoepitaxial 4H-SiC Layers
  Published in: Silicon Carbide and Related Materials 2006 (p65)
• Electronic Properties of Thermally Oxidized Single-Domain 3C-SiC/6H-SiC Grown by Vapour-Liquid-Solid Mechanism
  Published in: Silicon Carbide and Related Materials 2006 (p505)
• Growth Kinetics of 3C-SiC on α-SiC by VLS
  Published in: Silicon Carbide and Related Materials 2007 (p199)
• Growth Mechanism of 3C-SiC Heteroepitaxial Layers on α-SiC by VLS
  Published in: Silicon Carbide and Related Materials 2007 (p195)
• Growth of Nanocrystalline Translucent h-BN Films Deposited by CVD at High Temperature on SiC Substrates
  Published in: Silicon Carbide and Related Materials 2009 (p1191)
• Growth of SiC from a Liquid Phase at Low Temperature
  Published in: Silicon Carbide and Related Materials 2006 (p41)
• How to Grow 3C-SiC Single Domain on α-SiC(0001) by Vapor-Liquid-Solid Mechanism
  Published in: Silicon Carbide and Related Materials 2006 (p187)
• Improvement of 4H-SiC Selective Epitaxial Growth by VLS Mechanism Using Al and Ge Based Melts
  Published in: Silicon Carbide and Related Materials 2005 (p275)
• Nonequilibrium Carrier Dynamics in DPB-Free 3C-SiC Layer Studied by Dynamic Grating Technique in Wide Excitation and Temperature Range
  Published in: Silicon Carbide and Related Materials 2006 (p395)
• Optical Investigation of Cubic SiC Layers Grown on Hexagonal SiC Substrates by CVD and VLS
  Published in: Silicon Carbide and Related Materials 2006 (p403)
• Optical Study of Ge Incorporation in Cubic SiC Layers Grown by VLS
  Published in: Silicon Carbide and Related Materials 2007 (p529)
• Process Optimization for High Temperature SiC Lateral Devices
  Published in: Silicon Carbide and Related Materials 2008 (p585)
• SIMS Investigation of Ge Incorporation in 3C-SiC Layers Grown from Ge-Si Melts
  Published in: Silicon Carbide and Related Materials 2006 (p477)
• Single-Domain 3C-SiC Epitaxially Grown on 6H-SiC by the VLS Mechanism
  Published in: Silicon Carbide and Related Materials 2005 (p287)