HOME CONTACT My eBook

Username: Password:

> @scientific.net

Articles by author: Manfred Reiche

• Applications of In Situ Transmission Electron Microscopy to the Characterization of Process-Induced Defects
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p439)
• Contamination and Cleaning of GaAs-(100) Surfaces
  Published in: Defects in Semiconductors 18 (p1967)
• Correlations between TD Annihilation and Oxygen Precipitation in Czochralski-Grown Silicon
  Published in: Defects in Semiconductors 15 (p643)
• Defect Engineering in VLSI-Technologies
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p1)
• Defect Kinetics and Impurity Diffusion During Hot Implants Into Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p335)
• Determination of the Origin of Dislocation Related Luminescence from Silicon Using Regular Dislocation Networks
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIII (p567)
• Dislocation Networks Formed by Silicon Wafer Direct Bonding
  Published in: Advances in Light Emitting Materials (p57)
• Dislocations in Silicon as a Tool to Be Used in Optics, Electronics and Biology
  Published in: Gettering and Defect Engineering in Semiconductor Technology XII (p289)
• History and Future of Semiconductor Wafer Bonding
  Published in: Gettering and Defect Engineering in Semiconductor Technology VI (p33)
• Interface Defects of Bonded Silicon Wafers
  Published in: Defects in Semiconductors 18 (p1847)
• Investigations of the Behaviour of Transition Metals in Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p49)
• Investigations of the Structure, Formation, and Annihilation of Thermally Induced Donors in Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p33)
• On the Influence of Transition Metal Impurities on the Oxygen Precipitation in CZ-Grown Silicon
  Published in: Defects in Semiconductors 17 (p1529)
• Optimization of the Luminescence Properties of Silicon Diodes Produced by Implantation and Annealing
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIII (p579)
• Properties of Dislocations and Point Defects in Fz-Si
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p319)