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Articles by author: Marco Servidori

• Dependence of Phosphorus Transient Enhanced Diffusion on Depth Position of Extended Defects in Ion Implanted Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p243)
• Dependence of the Transient Enhanced Diffusion, of B in Si, upon B Concentration and Ion Implanted Dose
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p177)
• Dopant Anomalous Diffusion Induced in Silicon by Ion Implantation
  Published in: Ion Implantation in Semiconductors (p65)
• Influence of Temperature on Nano-Graphene Structuring of PLD Grown Carbon Films - An X-Ray Diffraction Study
  Published in: Diamond and Other New Carbon Materials IV (p55)
• Parallel Stress and Perpendicular Strain Depth-Distributions in [001] Silicon Amorphized by Ion Implantation
  Published in: Defects in Semiconductors 15 (p243)
• Static Disorder in Si_1-xGe_x Alloys and in Silicon on Insulator Structures
  Published in: Advances in Crystal Growth (p217)
• X-Ray and AFM Analysis of Al₂O₃ Deposited by ALCVD on n-Type 4H-SiC
  Published in: Silicon Carbide and Related Materials 2006 (p683)