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Articles by author: Mary Ellen Zvanut

• Deep Level Point Defects in Semi-Insulating SiC
  Published in: Silicon Carbide and Related Materials 2005 (p517)
• Defect Level of the Carbon Vacancy-Carbon Antisite Pair Center in SI 4H SiC
  Published in: Silicon Carbide and Related Materials 2007 (p385)
• Effects of Oxidation Conditions on the Concentration of Carbon Dangling Bonds in Oxidized 6H-SiC
  Published in: Silicon Carbide and Related Materials - 1999 (p1125)
• Generation and Annealing Kinetics of Oxygen Vacancy and Oxygen Excess Centers in Thin Film SiO₂
  Published in: Defects in Insulating Materials (p7)
• Infrared PL Signatures of n-Type Bulk SiC Substrates with Nitrogen Impurity Concentration between 10¹⁶ and 10¹⁷ cm^-3
  Published in: Silicon Carbide and Related Materials 2007 (p449)
• Observation of a Trivalent Ge Defect in Oxygen Implanted SiGe Alloys
  Published in: Defects in Semiconductors 16 (p1493)
• Optically Induced Transitions among Point Defects in High Purity and Vanadium-Doped Semi-Insulating 4H SiC
  Published in: Silicon Carbide and Related Materials 2003 (p489)
• Point Defects in 4H SiC Grown by Halide Chemical Vapor Deposition
  Published in: Silicon Carbide and Related Materials 2006 (p473)
• The Optical Admittance Spectroscopy of the Vanadium Donor and Acceptor Levels in Semi-Insulating 4H-SiC and 6H-SiC
  Published in: Silicon Carbide and Related Materials 2005 (p647)