Papers by Author: Norihiko Kiritani

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Single Contact-Material MESFETs on 4H-SiC
Authors: Satoshi Tanimoto, Masaki Inada, Norihiko Kiritani, Masakatsu Hoshi, Hideyo Okushi, Kazuo Arai
1221
Fabrication of Double Implanted (0001) 4H-SiC MOSFETs by using Pyrogenic Re-Oxidation Annealing
Authors: Ryouji Kosugi, Norihiko Kiritani, Kenji Suzuki, Tsutomu Yatsuo, Kazuhiro Adachi, Kenji Fukuda
1397
Gate Oxide with High Dielectric Breakdown Strength after Undergoing a Typical Power MOSFET Fabrication Process
Authors: Satoshi Tanimoto, Masakatsu Hoshi, Norihiko Kiritani, Hideyo Okushi, Kazuo Arai
725
Single Material Ohmic Contacts Simultaneously Formed on the Source/P-Well/Gate of 4H-SiC Vertical MOSFETs
Authors: Norihiko Kiritani, Masakatsu Hoshi, Satoshi Tanimoto, Kazuhiro Adachi, Shin Ichi Nishizawa, Tsutomu Yatsuo, Hideyo Okushi, Kazuo Arai
669
Fabrication of 4H-SiC Planar MESFETs Having Low Contact Resistance
Authors: Hoon Joo Na, Hyeong Joon Kim, Kazuhiro Adachi, Norihiko Kiritani, Satoshi Tanimoto, Hideyo Okushi, Kazuo Arai
1383
Ohmic Contact Structure and Fabrication Process Applicable to Practical SiC Devices
Authors: Satoshi Tanimoto, Norihiko Kiritani, Masakatsu Hoshi, Hideyo Okushi
879
4H-SiC ACCUFET with a Two-Layer Stacked Gate Oxide
Authors: Saichirou Kaneko, Hideaki Tanaka, Yoshio Shimoida, Norihiko Kiritani, Satoshi Tanimoto, Mitsugu Yamanaka, Masakatsu Hoshi
1073
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