Articles by author: O.F. Vyvenko
11 papers on 1 page:
1
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Depth Profiling of the Recombination Activity of Defects Measured by Temperature-Dependent Cross-Sectional EBIC
Published in: Beam Injection Assessment of Microstructures in Semiconductors (p65) -
Dislocations in Silicon as a Tool to Be Used in Optics, Electronics and Biology
Published in: Gettering and Defect Engineering in Semiconductor Technology XII (p289) -
DX-Like Centers in Dislocated Compound Semiconductors: A New Aspect of the Interaction between Extended Defects and Impurities
Published in: Gettering and Defect Engineering in Semiconductor Technology VI (p319) -
Electronic States of Oxygen-Free Dislocation Networks Produced by Direct Bonding of Silicon Wafers
Published in: Gettering and Defect Engineering in Semiconductor Technology XIII (p283) -
Impact of Hydrogenation on Electrical Properties of NiSi2 Precipitates in Silicon
Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p279) -
Impact of Low Temperature Hydrogenation on Recombination Activity of Dislocations in Silicon
Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p151) -
Impact of NiSi2 Precipitates Electronic Structure on the Minority Carrier Lifetime in n-and p-Type Silicon
Published in: Gettering and Defect Engineering in Semiconductor Technology XII (p155) -
Investigation of the Defect Distribution in Polycrystalline Silicon
Published in: Polycrystalline Semiconductors III (p243) -
Minority Carrier Transient Spectroscopy of Copper-Silicide and Nickel-Disilicide Precipitates in Silicon
Published in: Beam Injection Assessment of Defects in Semiconductors (p301) -
Nature of Dislocation-Related Deep Level Defects in CdS
Published in: Defects in Semiconductors 19 (p1359) -
Scanning X-Ray Excited Optical Luminescence Microscopy as a New Tool for the Analysis of Recombination Active Defects in Multi-Crystalline Silicon
Published in: Gettering and Defect Engineering in Semiconductor Technology XIV (p301)