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Articles by author: Olivier Palais

• Comparison of Efficiencies of Different Surface Passivations Applied to Crystalline Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p585)
• Impurity Concentration Mapping in Mulitcrystalline Silicon Wafers
  Published in: Beam Injection Assessment of Microstructures in Semiconductors (p3)
• Influence of Heating and Cooling Rates of Post-Implantation Annealing Process on Al-Implanted 4H-SiC Epitaxial Samples
  Published in: Silicon Carbide and Related Materials 2009 (p717)
• Investigation and Identification of Transition Metals in p-Type Boron-Doped Silicon by Non-Invasive Techniques
  Published in: Defects and Diffusion in Semiconductors - An Annual Retrospective VII (p125)
• Minority Carrier Lifetime Measurements in Specific Epitaxial 4H-SiC Layers by the Microwave Photoconductivity Decay
  Published in: Silicon Carbide and Related Materials 2008 (p295)
• Minority Carrier Lifetime Scan Maps Applied to Metallic Impurity Detection in Silicon Wafers
  Published in: Beam Injection Assessment of Microstructures in Semiconductors (p267)
• Optical and Electrical Simulation of 4H-SiC UV Photodetector by Finite Element Method
  Published in: Silicon Carbide and Related Materials 2010 (p563)