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Articles by author: P. Werner

• Decomposition and Microstructure during Crystallization of Amorphous Ge_xSi_1-x Films
  Published in: Polycrystalline Semiconductors III (p323)
• Differences in the Defect Structures of the Reaction Fronts of Solid State Reactions within Interface- and Diffusion-Controlled Reaction Regimes
  Published in: Diffusion in Materials DIMAT 1996 (p649)
• Diffusion in GaAs and Related Compounds: Recent Developments
  Published in: Diffusion in Materials DIMAT 1996 (p1079)
• Gettering Centres for Metals and Oxygen Formed in MeV-Ion-Implanted and Annealed Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology VIII (p235)
• Incorporation, Diffusion and Agglomeration of Carbon in Silicon
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p189)
• Influence of Growth Rate and Temperature on the Structure of Low Temperature GaAs
  Published in: Defects in Semiconductors 16 (p1045)
• Interaction of Copper and Sulfur with Dislocations in GaAs
  Published in: Beam Injection Assessment of Microstructures in Semiconductors (p331)
• Interdiffusion in GaAs/GaAsP and GaAs/GaAsSb Superlattices
  Published in: Diffusion in Materials DIMAT 1996 (p1101)
• Investigations of Extended Defects after Sulfur Diffusion in GaAs
  Published in: Gettering and Defect Engineering in Semiconductor Technology VIII (p443)
• Metal Gettering by Defective Regions in Carbon-Implanted Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology VII (p63)
• Si Wafer Bonding: Structural Features of the Interface
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIII (p85)
• The Interface Structure during Solid State Reactions and Its Influence on Reaction Kinetics and Reaction Mechanism
  Published in: Intergranular and Interphase Boundaries in Materials (p185)
• Transformations in Si_1-xGe_x:H Films on SiO₂ Substrates
  Published in: Polycrystalline Semiconductors IV (p283)