Papers by Author: Paolo Musumeci

Abstract: The growth rate of 4H-SiC epi layers has been increased by a factor 3 (up to 18μm/h) with respect to the standard process with the introduction of HCl in the deposition chamber. The epitaxial layers grown with the addition of HCl have been characterized by electrical, optical and structural characterization methods. An optimized process without the addition of HCl is reported for comparison. The Schottky diodes, manufactured on the epitaxial layer grown with the addition of HCl at 1600 °C, have electrical characteristics comparable with the standard epitaxial process with the advantage of an epitaxial growth rate three times higher.

Abstract: Photoluminescence (PL) and time resolved PL are well established as important experimental techniques to study electronic properties of SiC. We studied the influence of ionimplantation on the photoluminescence peak at 423nm and the variation of the minority carrier lifetime (MCL).