Articles by author: Peter J. Wellmann
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Results of SIMS, LTPL and Temperature-Dependent Hall Effect Measurements Performed on Al-Doped α-SiC Substrates Grown by the M-PVT Method
Published in: Silicon Carbide and Related Materials 2005 (p633) -
Silicon Carbide Growth:C/Si Ratio Evaluation and Modeling
Published in: Silicon Carbide and Related Materials 2007 (p83) -
Stability Criteria for 4H-SiC Bulk Growth
Published in: Silicon Carbide and Related Materials 2000 (p25) -
Structural Defects in SiC Crystals Investigated by High Energy X-Ray Diffraction
Published in: Silicon Carbide and Related Materials 2003 (p339) -
Study of Boron Incorporation During PVT Growth of p-type SiC Crystals
Published in: Silicon Carbide and Related Materials 2000 (p49) -
Thermal Expansion Coefficients of 6H Silicon Carbide
Published in: Silicon Carbide and Related Materials 2007 (p517)