Articles by author: Peter Mascher
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A Positron Annihilation Study of Defects in ZnO and Their Relation to Luminescence Centers
Published in: Defects in Semiconductors 17 (p465) -
Bulk Studies of Defects in Semiconductors
Published in: Positron Annihilation - ICPA-12 (p30) -
Characterization of Radiation- Induced Defects in ZnO Probed by Positron Annihilation Spectroscopy
Published in: Positron Annihilation - ICPA-12 (p141) -
Defect Characterization of Barium Titanates, Tantalates and Niobates by PAS and ESR
Published in: Positron Annihilation - ICPA-13 (p129) -
Defect Characterization of II-VI Compound Semiconductors Using Positron Lifetime Spectroscopy
Published in: Defects in Semiconductors 19 (p1335) -
Defect Distribution across 6-Inch CZ-Silicon Wafers
Published in: Positron Annihilation - ICPA-9 (p1185) -
Defect Distribution in Large CZ-Silicon Wafers Investigated by Positron Annihilation Spectroscopy
Published in: Defects in Semiconductors 16 (p413) -
Deformation-Induced Defects in GaSb
Published in: Defects in Semiconductors 18 (p1449) -
Depth Profiling of Defects in Low Temperature MBE-Grown Silicon
Published in: Positron Annihilation - ICPA-9 (p301) -
Effects of Boron Doping on the Annealing Characteristics of Cz-Silicon
Published in: Defects in Semiconductors 15 (p225) -
Gas and Heat Treatment Effects on the Defect Structure of a-SiC:H Films
Published in: Defects in Semiconductors 19 (p709) -
Hydrogen and Nitrogen Loss during ERD Analysis of Siliicon (Oxy)nitrides
Published in: Materials Science Applications of Ion Beam Techniques (p381) -
Microstructural Evolution of Radiation-Induced Defects in Semi-Insulating SiC During Isochronal Annealing
Published in: Silicon Carbide and Related Materials - 1999 (p965) -
On the Influence of Doping and Annealing on Oxygen-Related Defects in Silicon
Published in: Defects in Semiconductors 14 (p869) -
Point Defects in ZnO:Mn and Their Relation to Luminescence Centres
Published in: Positron Annihilation - ICPA-9 (p1145)