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Articles by author: Pierre M. Masri

• Accurate Prediction of Lattice Distortion for Complex Defects in Semiconductors: Extended Interstitials as Tests of Valence Force Potentials
  Published in: Defects in Semiconductors 14 (p73)
• Analysis of Graphitization during Physical Vapor Transport Growth of Silicon Carbide
  Published in: Silicon Carbide and Related Materials 2003 (p55)
• Effect of Thermal Field on Interface Step Structures during PVT Growth of (0001)Si 6H-SiC
  Published in: Silicon Carbide and Related Materials 2003 (p95)
• Effective Increase of Single-Crystalline Yield during PVT Growth of SiC by Tailoring of Radial Temperature Gradient
  Published in: Silicon Carbide and Related Materials - 2002 (p67)
• Electrical Characterization of SiC/Si Heterostructures with Modified Interfaces
  Published in: Silicon Carbide and Related Materials 2001 (p355)
• High-Resolution XRD Investigations of the Strain Reduction in 3C-SiC Thin Films Grown on Si (111) Substrates
  Published in: Silicon Carbide and Related Materials - 2002 (p233)
• Improvement of the Thermal Conductivity in 4H-SiC Epitaxial Layer by Introducing Gettering Sites
  Published in: Silicon Carbide and Related Materials 2007 (p525)
• Influence of the Ge Coverage Prior to Carbonization on the Structure of SiC Grown on Si(111)
  Published in: Silicon Carbide and Related Materials 2003 (p297)
• Morphology and Stress Control in UHVCVD of 3C-SiC(100) on Si
  Published in: Silicon Carbide and Related Materials 2006 (p203)
• Natural Crystal Habit and Preferential Growth Directions during PVT of Silicon Carbide
  Published in: Silicon Carbide and Related Materials 2003 (p111)
• Optimization of Interface and Interphase Systems: The Case of SiC and III-V Nitrides
  Published in: Silicon Carbide and Related Materials 2001 (p733)
• Physics of Heteroepitaxy and Heterophases
  Published in: Silicon Carbide and Related Materials 2001 (p379)
• Raman Investigation of the Effect of Metal Impurities at Gettering Sites on Phonon and Electron Related Properties of 4H-SiC n-n⁺ Junctions
  Published in: Silicon Carbide and Related Materials 2007 (p465)
• SiC Polytype Stability Influenced by Ge Impurities
  Published in: Silicon Carbide and Related Materials 2007 (p533)
• Silicon Carbide Buffer Layers for Nitride Growth on Si
  Published in: Silicon Carbide and Related Materials 2001 (p1485)