HOME CONTACT My eBook

Username: Password:

> @scientific.net

Articles by author: Rainer Hock

• [01-15] Grown 6H-SiC Bulk Crystals Investigated by High Energy Triple Axis X-Ray Diffraction
  Published in: Silicon Carbide and Related Materials 2004 (p307)
• In Situ Observation of Polytype Switches during SiC PVT Bulk Growth by High Energy X-Ray Diffraction
  Published in: Silicon Carbide and Related Materials 2008 (p23)
• 6H-SiC Crystals Grown in [015] and [001] Directions Characterized by High Energy Triple-Axis X-Ray Diffraction
  Published in: Silicon Carbide and Related Materials 2006 (p219)
• Fundamental Study of the Temperature Ramp-Up Influence for 3C-SiC Hetero-Epitaxy on Silicon (100)
  Published in: Silicon Carbide and Related Materials 2009 (p151)
• Germanium Incorporation during PVT Bulk Growth of Silicon Carbide
  Published in: Silicon Carbide and Related Materials 2008 (p11)
• In Situ X-Ray Measurements of Defect Generation during PVT Growth of SiC
  Published in: Silicon Carbide and Related Materials 2006 (p267)
• Observation of Lattice Plane Bending during SiC PVT Bulk Growth Using In Situ High Energy X-Ray Diffraction
  Published in: Silicon Carbide and Related Materials 2009 (p29)
• Structural Defects in SiC Crystals Investigated by High Energy X-Ray Diffraction
  Published in: Silicon Carbide and Related Materials 2003 (p339)
• The Build-Up of Strain Fields in Czochralski-Si Observed in Real Time by High Energy X-Ray Diffraction
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p631)
• Thermal Expansion Coefficients of 6H Silicon Carbide
  Published in: Silicon Carbide and Related Materials 2007 (p517)