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Articles by author: René A. Stein

• Advances in Multi- and Single-Wafer SiC Epitaxy for the Production and Development of Power Diodes
  Published in: Silicon Carbide and Related Materials 2007 (p95)
• Challenges in Large-Area Multi-Wafer SiC Epitaxy for Production Needs
  Published in: Silicon Carbide and Related Materials 2005 (p135)
• Epitaxial Growth of 4H-SiC on (000-1) C-Face Substrates by Cold-Wall and Hot-Wall Chemical Vapor Deposition
  Published in: Silicon Carbide and Related Materials 2006 (p89)
• Hall Effect and Infrared Absorption Measurements on Nitrogen Donors in 4H-SiC
  Published in: Shallow Impurities in Semiconductors V (p495)
• High-Performance Multi-Wafer SiC Epitaxy – First Results of Using a 10x100mm Reactor
  Published in: Silicon Carbide and Related Materials 2009 (p89)
• Luminescence and Absorption of Vanadium (V⁴⁺): In 6H-Silicon Carbide
  Published in: Defects in Semiconductors 16 (p1213)
• Properties and Suitability of 4H-SiC Epitaxial Layers Grown at Different CVD Systems for High Voltage Applications
  Published in: Silicon Carbide and Related Materials 2003 (p181)