Roberto S. Brusa | Scientific.Net

Positron Manipulation and Positronium Laser Excitation in AEgIS

Authors: Sebastiano Mariazzi, Ruggero Caravita, Stefano Aghion, Claude Amsler, Akitaka Ariga, Tomoko Ariga, Germano Bonomi, Philippe Bräunig, Johan Bremer, Roberto S. Brusa, Luis Cabaret, Massimo Caccia, Fabrizio Castelli, G. Cerchiari, Karl Chlouba, Simone Cialdi, Daniel Comparat, Giovanni Consolati, Andrea Demetrio, Lea di Noto, Michael Doser, Alexey Dudarev, Antonio Ereditato, Craig Evans, Rafael Ferragut, Julian Fesel, Andrea Fontana, Ola K. Forslund, Sebastian Gerber, Marco Giammarchi, Angela Gligorova, Sergei Gninenko, Francesco Guatieri, Stefan Haider, Helga Holmestad, Torkjell Huse, Ine L. Jernelv, Elena Jordan, Thomas Kaltenbacher, Alban Kellerbauer, Mitsuhiro Kimura, Torsten Koetting, Daniel Krasnicky, Vittorio Lagomarsino, Pierre Lansonneur, Patrice Lebrun, Sebastian Lehner, Joanna Liberadzka, Chloe Malbrunot, Lisa Marx, Viktor Matveev, Zeudi Mazzotta, Giancarlo Nebbia, Patrick Nedelec, Markus Oberthaler, Nicola Pacifico, Davide Pagano, Luca Penasa, Vojtech Petracek, Ciro Pistillo, Francesco Prelz, Marco Prevedelli, Luca Ravelli, Laura Resch, Benjamin Rienäcker, Ole M. Røhne, Stefan Rosenberger, Alberto Rotondi, Michele Sacerdoti, Heidi Sandaker, Romualdo Santoro, Paola Scampoli, Fiodor Sorrentino, Michal Spacek, James Storey, Izabela M. Strojek, Gemma Testera, Ingmari Tietje, Stefan Vamosi, Eberhard Widmann, Pauline Yzombard, Sandra Zavatarelli, Johann Zmeskal

Abstract: Production of antihydrogen by using the charge exchange reaction, as proposed by AEgIS (Antimatter Experiment: gravity, Interferometry, Spectroscopy), requires the formation of a dense cloud of positronium atoms excited to Rydberg states. In this work, the recent advances in AEgIS towards this result are described. Namely, the manipulation of positrons to produce bunches containing more than 10⁸ particles and the laser excitation of positronium to Rydberg states, using n=3 as intermediate level, are presented.

11

Sub-Surface Defects Induced by Low Energy Ar⁺ Sputtering of Silver

Authors: Marco Duarte Naia, Paulo M. Gordo, Orlando M.N.D. Teodoro, Adriano P. de Lima, Augusto M.C. Moutinho, Roberto S. Brusa

Abstract: Induced defects in silver polycrystalline samples irradiated with 4 keV Ar+ were characterised with slow positron implantation spectroscopy. The implanted gas was found to interact with ion irradiation defects. The evolution of the defects and gas-defect interactions were followed through a multi-step isochronal annealing treatment. Two different defected regions were detected. A region near to the surface, due to a distribution of vacancy-like defects produced by irradiation, and a deeper one due to coalescence of Ar. The deeper defects evolve with thermal treatments and probably produce cavities which are not easily recovered.

1608

Near-Surface Studies on Low-Energy Ion Irradiated Ni Using a Positron Beam

Authors: Marco Duarte Naia, Paulo M. Gordo, Adriano P. de Lima, Augusto M.C. Moutinho, Roberto S. Brusa

623

Comparative Study of Porosity in Low-k SiOCH Thin Films Obtained at Different Deposition Conditions

Authors: Roberto S. Brusa, C.E. Macchi, Sebastiano Mariazzi, Monica Spagolla, Grzegorz P. Karwasz, Antonio Zecca

268

Positron Annihilation Studies of Oxygen Precipitation in Silicon and of Nano-Precipitates in Si-Rich SiO₂ Films: Role of Vacancy-Like Defects

Authors: Roberto S. Brusa, W. Deng, Grzegorz P. Karwasz, Antonio Zecca

81

Surfaces of SiO₂-Bi₂O₃ Glasses Studied by a Slow Positron Beam

Authors: Grzegorz P. Karwasz, W. Deng, Roberto S. Brusa, Antonio Zecca, Maria Gazda, B. Kusz, K. Trzebiatowski, D. Pliszka

466

Influence of Mn and Fe on Defects in NiAl Alloy Investigated by Positron Annihilation Techniques

Authors: W. Deng, Roberto S. Brusa, Grzegorz P. Karwasz, Antonio Zecca

198

Defect Studies in Fe₃Al Alloys Doped with Cr, Mo and Si

Authors: W. Deng, Roberto S. Brusa, Grzegorz P. Karwasz, Antonio Zecca

195

Pre-Cavities Defect Distribution in He Implanted Silicon Studied by Slow Positron Beam

Authors: Roberto S. Brusa, Grzegorz P. Karwasz, Antonio Zecca, F. Corni, R. Tonini, G. Ottaviani

385

Evolution of Defect Profiles in He-Implanted Silicon Studied by Slow Positrons

Authors: Roberto S. Brusa, Grzegorz P. Karwasz, N. Tiengo, Antonio Zecca, F. Corni, C. Nobili, G. Ottaviani, R. Tonini

665

Papers by Author: Roberto S. Brusa