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Articles by author: Roland Weingärtner

• Absorption Measurements and Doping Level Evaluation in n-Type and p-Type 4H-SiC and 6H-SiC
  Published in: Silicon Carbide and Related Materials 2000 (p397)
• Aluminum Doping of 6H- and 4H-SiC with a Modified PVT Growth Method
  Published in: Silicon Carbide and Related Materials 2001 (p131)
• Cathodoluminescence Measurements and Thermal Activation of Rare Earth Doped (Tb³⁺, Dy³⁺ and Eu³⁺) a-SiC Thin Films Prepared by rf Magnetron Sputtering
  Published in: Silicon Carbide and Related Materials 2005 (p663)
• Determination of Exciton Capture Cross-Sections of Neutral Nitrogen Donor on Cubic and Hexagonal Sites in n-Type (N) 6H-SiC
  Published in: Silicon Carbide and Related Materials - 2002 (p341)
• Determination of the Optical Bandgap of Thin Amorphous (SiC)_1-x(AlN)_x Films
  Published in: Silicon Carbide and Related Materials 2009 (p263)
• Electrical and Optical Characterization of p-Type Boron-Doped 6H-SiC Bulk Crystals
  Published in: Silicon Carbide and Related Materials - 2002 (p337)
• High Al-Doping of SiC Using a Modified PVT (M-PVT) Growth Set-Up
  Published in: Silicon Carbide and Related Materials 2004 (p31)
• Impact of Compensation on Optical Absorption Bands in the Below-Bandgap Region in n-Type (N) 6H-SiC
  Published in: Silicon Carbide and Related Materials - 2002 (p333)
• Incorporation of Boron and the Role of Nitrogen as a Compensation Source in SiC Bulk Crystal Growth
  Published in: Silicon Carbide and Related Materials 2001 (p127)
• On the Origin of the Below Band-Gap Absorption Bands in n-Type (N) 4H- and 6H-SiC
  Published in: Silicon Carbide and Related Materials 2003 (p645)
• On the Preparation of Vanadium-Doped Semi-Insulating SiC Bulk Crystals
  Published in: Silicon Carbide and Related Materials 2001 (p139)
• Preparation of Semi-Insulating Silicon Carbide by Vanadium Doping during PVT Bulk Crystal Growth
  Published in: Silicon Carbide and Related Materials - 2002 (p51)
• Quality Control and Electrical Properties of Thin Amorphous (SiC)_1-x(AlN)_x Films Produced by Radio Frequency Dual Magnetron Sputtering
  Published in: Silicon Carbide and Related Materials 2009 (p1199)
• Stability Criteria for 4H-SiC Bulk Growth
  Published in: Silicon Carbide and Related Materials 2000 (p25)
• Study of Boron Incorporation During PVT Growth of p-type SiC Crystals
  Published in: Silicon Carbide and Related Materials 2000 (p49)