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Articles by author: S.G. Sridhara

• Absorption Bands Associated with Conduction Bands and Impurity States in 4H and 6H SiC
  Published in: Silicon Carbide and Related Materials - 1999 (p551)
• Boron Four Particle Acceptor Bound Exciton Complex in 4H SiC
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p461)
• Characterisation and Defects in Silicon Carbide
  Published in: Silicon Carbide and Related Materials 2001 (p9)
• D_II Revisited in an Modern Guise - 6H and 4H SiC
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p493)
• D_ll PL Intensity Dependence on Dose, Implantation Temperature and Implanted Species in 4H- and 6H-SiC
  Published in: Silicon Carbide and Related Materials - 2002 (p345)
• Differential Absorption Measurement of Valence Band Splittings in 4H SiC
  Published in: Silicon Carbide and Related Materials - 1999 (p567)
• Investigation of an Ion-Implantation Induced High Temperature Persistent Intrinsic Defect in SiC
  Published in: Silicon Carbide and Related Materials 2000 (p377)
• Optical Properties of Silicon Carbide: Some Recent Developments
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p455)
• Oxygen-Related Defect Centers in 4H Silicon Carbide
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p553)
• Phosphorus Four Particle Donor Bound Exciton Complex in 6H SiC
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p465)
• Proton Irradiation Induced Defects in 4H-SiC
  Published in: Silicon Carbide and Related Materials 2000 (p431)
• Time Resolved PL Study of Multi Bound Excitons in 3C SiC
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p485)