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Articles by author: Sakwe Aloysius Sakwe

• Analysis of Graphitization during Physical Vapor Transport Growth of Silicon Carbide
  Published in: Silicon Carbide and Related Materials 2003 (p55)
• Basal Plane Dislocation Dynamics in Highly p-Type Doped versus Highly n-Type Doped SiC
  Published in: Silicon Carbide and Related Materials 2005 (p79)
• Contactless Electrical Defect Characterization and Topography of a-Plane Grown Epitaxial Layers
  Published in: Silicon Carbide and Related Materials 2006 (p327)
• Defect Etching of Non-Polar and Semi-Polar Faces in SiC
  Published in: Silicon Carbide and Related Materials 2006 (p243)
• Development of a KOH Defect Etching Furnace with Absolute In-Situ Temperature Measurement Capability
  Published in: Silicon Carbide and Related Materials 2004 (p283)
• Efficient Image Segmentation for Detection of Dislocations in High Resolution Light Microscope Images of SiC Wafers
  Published in: Silicon Carbide and Related Materials 2010 (p277)
• Growth and Characterization of ¹³C Enriched 4H-SiC for Fundamental Materials Studies
  Published in: Silicon Carbide and Related Materials 2006 (p13)
• Impact of Compensation on Optical Absorption Bands in the Below-Bandgap Region in n-Type (N) 6H-SiC
  Published in: Silicon Carbide and Related Materials - 2002 (p333)
• Impact of n-Type versus p-Type Doping on Mechanical Properties and Dislocation Evolution during SiC Crystal Growth
  Published in: Silicon Carbide and Related Materials 2006 (p259)
• Influence of Growth Temperature on the Evolution of Dislocations during PVT Growth of Bulk SiC Single Crystals
  Published in: Silicon Carbide and Related Materials 2006 (p263)
• Modified Physical Vapor Transport Growth of SiC - Control of Gas Phase Composition for Improved Process Conditions
  Published in: Silicon Carbide and Related Materials 2004 (p25)
• Thermal Expansion Coefficients of 6H Silicon Carbide
  Published in: Silicon Carbide and Related Materials 2007 (p517)