HOME CONTACT My eBook

Username: Password:

> @scientific.net

Articles by author: Shoichiro Tanigawa

• The Effect of Point Defects on the Electrical Activation of Si-Implanted GaAs during Rapid Thermal Annealing Studied by Slow Positrons
  Published in: Positron Annihilation - ICPA-9 (p1491)
• The Study of Defects Induced by the Implantation of O Ions into GaAs by a Slow Positron Beam
  Published in: Shallow Impurities in Semiconductors V (p411)
• The Study of Se- and Si-Implanted GaAs by Slow Positrons
  Published in: Positron Annihilation - ICPA-9 (p1387)
• The Study of Surface State of III-V Compound Semiconductors by Slow Positrons
  Published in: Positron Annihilation - ICPA-9 (p1495)
• Three Dimensional Electron-Positron Momentum Density in 2H-NbSe₂
  Published in: Positron Annihilation - ICPA-9 (p775)
• Three Dimensional Electron-Positron Momentum Density in Both Paramagnetic and Antiferromagnetic Cr
  Published in: Positron Annihilation - ICPA-9 (p719)
• Three Dimensional Electron-Positron Momentum Density in Paramagnetic Cr, Mo and W
  Published in: Positron Annihilation - ICPA-9 (p727)
• Three Dimensional Electron-Positron Momentum Density in V, Nb and Ta
  Published in: Positron Annihilation - ICPA-9 (p723)
• Vacancy-Oxygen Complexes in Si Probed by Positron Annihilation
  Published in: Positron Annihilation - ICPA-10 (p553)
• Vacancy-Type Defects in Si⁺- and B⁺-Implanted Si Probed by a Monoenergetic Positron Beam
  Published in: Positron Annihilation - ICPA-9 (p1479)
• Variable-Energy Positron-Beam Studies of Si Implanted with MeV-Energy Ions
  Published in: Positron Annihilation - ICPA-9 (p1471)