Articles by author: Sven Öberg
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A First Principles Study of Interstitial Si in Diamond
Published in: Defects in Semiconductors 19 (p781) -
A Theoretical Study of Copper Contaminated Dislocations in Silicon
Published in: Gettering and Defect Engineering in Semiconductor Technology XII (p259) -
Ab Initio Calculations on Interstitial O Clusters in Si
Published in: Shallow Impurities in Semiconductors IV (p287) -
An Ab Initio Study of Intrinsic Stacking Faults in GaN
Published in: Silicon Carbide and Related Materials 2003 (p1617) -
Anomalous Shift of the 1075 cm-1 Oxygen-Hydrogen Defect in Silicon
Published in: Defects in Semiconductors 19 (p277) -
Breakdown of the Vacancy Model for Impurity-Vacancy Defects in Diamond
Published in: Defects in Semiconductors 19 (p775) -
Density Functional Based Modelling of 30° Partial Dislocations in SiC
Published in: Silicon Carbide and Related Materials 2003 (p453) -
Dislocation Structures in Diamond: Density-Functional Based Modelling and High-Resolution Electron Microscopy
Published in: Defects and Diffusion in Ceramics (p11) -
Effective Mass of Electrons in Quantum-Well-Like Stacking-Fault Gap States in Silicon Carbide
Published in: Silicon Carbide and Related Materials - 2002 (p519) -
Electronic Localization around Stacking Faults in Silicon Carbide
Published in: Silicon Carbide and Related Materials 2001 (p529) -
Electronic Properties and Structure of a Complex Incorporating a Self-Interstitial and two Oxygen Atoms in Silicon
Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p273) -
Electronic Properties of Stacking Faults in 15R-SiC
Published in: Silicon Carbide and Related Materials - 2002 (p531) -
Electronic Structure of Twin Boundaries in 3C-SiC, Si and Diamond
Published in: Silicon Carbide and Related Materials - 2002 (p527) -
First Principles Investigation of Vacancy Oxygen Defects in Si
Published in: Defects in Semiconductors 18 (p1297) -
H Interacting with Intrinsic Defects in Si
Published in: Defects in Semiconductors 18 (p933)